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Journal of Vacuum Science & Technology B最新文献

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Room temperature inductively coupled plasma etching of InP with Cl2 mixtures using SiO2 and photoresist masks 使用二氧化硅和光刻胶掩模，用 Cl2 混合物对 InP 进行室温电感耦合等离子体刻蚀
Journal of Vacuum Science & Technology B Pub Date : 2024-02-14 DOI: 10.1116/6.0003295
Qingyue Li, Claire Deeb, Hélène Debregeas, J. Pelouard
{"title":"Room temperature inductively coupled plasma etching of InP with Cl2 mixtures using SiO2 and photoresist masks","authors":"Qingyue Li, Claire Deeb, Hélène Debregeas, J. Pelouard","doi":"10.1116/6.0003295","DOIUrl":"https://doi.org/10.1116/6.0003295","url":null,"abstract":"We report the results of a study on the inductively coupled plasma (ICP) etching of InP at room temperature using Cl2 mixtures (Cl2/N2/H2). The impact of different process parameters, including the RF power, the ICP power, the ion-to-neutral ratio, and the chamber pressure, on the etched profile was investigated. The etch rate, selectivity, and anisotropy of the profile were depicted for each etching recipe. Two types of masks, such as SiO2 and AZ5214 photoresist, were used in this study. The etched InP feature showed a very smooth surface (rms as low as 0.5 nm) and a relatively fast etch rate of about 450 nm/min with both masks. By adjusting the etch process and depending on the used mask, we tuned the anisotropy from about 19° to 60°. A selectivity of around 4:1 and 1:1 was obtained with SiO2 and photoresist masks, respectively. These results demonstrate how altering the ICP process parameters could affect the etching characteristics and profile.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"50 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139777357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Widely tunable single-mode interband cascade lasers based on V-coupled cavities and dependence on design parameters 基于 V 型耦合腔的宽可调单模带间级联激光器及其对设计参数的依赖性
Journal of Vacuum Science & Technology B Pub Date : 2024-02-08 DOI: 10.1116/6.0003376
Zhanyi Wang, Jingli Gong, Jian-Jun He, Lu Li, Rui Q. Yang, James A. Gupta
{"title":"Widely tunable single-mode interband cascade lasers based on V-coupled cavities and dependence on design parameters","authors":"Zhanyi Wang, Jingli Gong, Jian-Jun He, Lu Li, Rui Q. Yang, James A. Gupta","doi":"10.1116/6.0003376","DOIUrl":"https://doi.org/10.1116/6.0003376","url":null,"abstract":"We report an investigation of V-coupled cavity interband cascade (IC) lasers (ICLs) emitting in the 3-μm wavelength range, employing various waveguide structures and coupler sizes. Type-II ICL devices with double-ridge waveguides exhibited wide tuning ranges exceeding 153 nm. Type-I ICL devices with deep-etched waveguides achieved single-mode emission with wavelength tunable over 100 nm at relatively high temperatures up to 250 K. All devices exhibited a side-mode suppression ratio higher than 30 dB. By comparing the performance of all devices with different sizes and configurations, a good tolerance against the structural parameter variations of the V-coupled cavity laser (VCCL) design is demonstrated, validating the advantages of the VCCL to achieve single-mode emission with wide tunability.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":" 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139791467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Widely tunable single-mode interband cascade lasers based on V-coupled cavities and dependence on design parameters 基于 V 型耦合腔的宽可调单模带间级联激光器及其对设计参数的依赖性
Journal of Vacuum Science & Technology B Pub Date : 2024-02-08 DOI: 10.1116/6.0003376
Zhanyi Wang, Jingli Gong, Jian-Jun He, Lu Li, Rui Q. Yang, James A. Gupta
{"title":"Widely tunable single-mode interband cascade lasers based on V-coupled cavities and dependence on design parameters","authors":"Zhanyi Wang, Jingli Gong, Jian-Jun He, Lu Li, Rui Q. Yang, James A. Gupta","doi":"10.1116/6.0003376","DOIUrl":"https://doi.org/10.1116/6.0003376","url":null,"abstract":"We report an investigation of V-coupled cavity interband cascade (IC) lasers (ICLs) emitting in the 3-μm wavelength range, employing various waveguide structures and coupler sizes. Type-II ICL devices with double-ridge waveguides exhibited wide tuning ranges exceeding 153 nm. Type-I ICL devices with deep-etched waveguides achieved single-mode emission with wavelength tunable over 100 nm at relatively high temperatures up to 250 K. All devices exhibited a side-mode suppression ratio higher than 30 dB. By comparing the performance of all devices with different sizes and configurations, a good tolerance against the structural parameter variations of the V-coupled cavity laser (VCCL) design is demonstrated, validating the advantages of the VCCL to achieve single-mode emission with wide tunability.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"28 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139851592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparing the properties and growth of graphene on electrolytic and rolled Cu foils by chemical vapor deposition 通过化学气相沉积比较电解铜箔和压延铜箔上石墨烯的特性和生长情况
Journal of Vacuum Science & Technology B Pub Date : 2024-02-06 DOI: 10.1116/6.0002893
Woo Jin Lee, Sang Ho Kim, Jun Sun Eom, Arnaud Caron
{"title":"Comparing the properties and growth of graphene on electrolytic and rolled Cu foils by chemical vapor deposition","authors":"Woo Jin Lee, Sang Ho Kim, Jun Sun Eom, Arnaud Caron","doi":"10.1116/6.0002893","DOIUrl":"https://doi.org/10.1116/6.0002893","url":null,"abstract":"In this work, we use electrolytic copper foils as substrates for the deposition of graphene by chemical vapor deposition. We investigate the effects of preannealing conditions, methane injection time, and temperature to synthesize graphene with a similar quality as when grown on cold-rolled copper. We find that the electrolytic copper foil’s annealing conditions and CH4 injection temperature determine the quality of graphene.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"88 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139799850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparing the properties and growth of graphene on electrolytic and rolled Cu foils by chemical vapor deposition 通过化学气相沉积比较电解铜箔和压延铜箔上石墨烯的特性和生长情况
Journal of Vacuum Science & Technology B Pub Date : 2024-02-06 DOI: 10.1116/6.0002893
Woo Jin Lee, Sang Ho Kim, Jun Sun Eom, Arnaud Caron
{"title":"Comparing the properties and growth of graphene on electrolytic and rolled Cu foils by chemical vapor deposition","authors":"Woo Jin Lee, Sang Ho Kim, Jun Sun Eom, Arnaud Caron","doi":"10.1116/6.0002893","DOIUrl":"https://doi.org/10.1116/6.0002893","url":null,"abstract":"In this work, we use electrolytic copper foils as substrates for the deposition of graphene by chemical vapor deposition. We investigate the effects of preannealing conditions, methane injection time, and temperature to synthesize graphene with a similar quality as when grown on cold-rolled copper. We find that the electrolytic copper foil’s annealing conditions and CH4 injection temperature determine the quality of graphene.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"5 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139859802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Excitonic effects in the optical absorption of gapless semiconductor α-tin near the direct bandgap 直接带隙附近无隙半导体 α-锡光学吸收中的激子效应
Journal of Vacuum Science & Technology B Pub Date : 2024-02-05 DOI: 10.1116/6.0003278
Stefan Zollner
{"title":"Excitonic effects in the optical absorption of gapless semiconductor α-tin near the direct bandgap","authors":"Stefan Zollner","doi":"10.1116/6.0003278","DOIUrl":"https://doi.org/10.1116/6.0003278","url":null,"abstract":"Most cubic semiconductors have threefold degenerate p-bonding valence bands and nondegenerate s-antibonding conduction bands. This allows strong interband transitions from the valence to the conduction bands. On the other hand, intervalence band transitions within p-bonding orbitals in conventional p-type semiconductors are forbidden at k=0 and, therefore, weak, but observable. In gapless semiconductors, however, the s-antibonding band moves down between the split-off hole band and the valence band maximum due to the Darwin shift. This band arrangement makes them three-dimensional topological insulators. It also allows strong interband transitions from the s-antibonding valence band to the p-bonding bands, which have been observed in α-tin with Fourier-transform infrared spectroscopic ellipsometry [Carrasco et al., Appl. Phys. Lett. 113, 232104 (2018)]. This manuscript presents a theoretical description of such transitions applicable to many gapless semiconductors. This model is based on k→⋅p→ theory, degenerate carrier statistics, the excitonic Sommerfeld enhancement, and screening of the transitions by many-body effects. The impact of nonparabolic bands is approximated within Kane’s 8×8k→⋅p→-model by adjustments of the effective masses. This achieves agreement with experiments.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"9 12","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139802848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In situ plasma pin-up clean process for backside bevel polymer removal, defect reduction, and queue time relaxation 用于去除背面坡口聚合物、减少缺陷和放宽排队时间的原位等离子针刺清洁工艺
Journal of Vacuum Science & Technology B Pub Date : 2024-02-05 DOI: 10.1116/6.0003300
B. B. Ye, Ganquan Song, Jeff J. Ye
{"title":"In situ plasma pin-up clean process for backside bevel polymer removal, defect reduction, and queue time relaxation","authors":"B. B. Ye, Ganquan Song, Jeff J. Ye","doi":"10.1116/6.0003300","DOIUrl":"https://doi.org/10.1116/6.0003300","url":null,"abstract":"Polymeric residues and films of various thicknesses on the wafer backside and the edge frontside bevel and backside are known to cause substantial yield losses. An additional ex situ bevel etch step can clear away these buildups from the edge bevel area but not from the wafer backside. In this paper, we demonstrate a novel and innovative in situ pin-up plasma clean step that can effectively remove polymers from both the wafer backside and the edge bevel areas, eliminating the need for the bevel etch step. A physical analysis of blanket test wafers and patterned product wafers that have underwent the pin-up clean step in inductively coupled plasma and capacitively coupled plasma etch systems reveals that the pin-up clean step can reduce defect counts on product wafers and improve manufacturing cycle time and throughput by relaxing the queue time constraint.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"22 38","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139803413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In situ plasma pin-up clean process for backside bevel polymer removal, defect reduction, and queue time relaxation 用于去除背面坡口聚合物、减少缺陷和放宽排队时间的原位等离子针刺清洁工艺
Journal of Vacuum Science & Technology B Pub Date : 2024-02-05 DOI: 10.1116/6.0003300
B. B. Ye, Ganquan Song, Jeff J. Ye
{"title":"In situ plasma pin-up clean process for backside bevel polymer removal, defect reduction, and queue time relaxation","authors":"B. B. Ye, Ganquan Song, Jeff J. Ye","doi":"10.1116/6.0003300","DOIUrl":"https://doi.org/10.1116/6.0003300","url":null,"abstract":"Polymeric residues and films of various thicknesses on the wafer backside and the edge frontside bevel and backside are known to cause substantial yield losses. An additional ex situ bevel etch step can clear away these buildups from the edge bevel area but not from the wafer backside. In this paper, we demonstrate a novel and innovative in situ pin-up plasma clean step that can effectively remove polymers from both the wafer backside and the edge bevel areas, eliminating the need for the bevel etch step. A physical analysis of blanket test wafers and patterned product wafers that have underwent the pin-up clean step in inductively coupled plasma and capacitively coupled plasma etch systems reveals that the pin-up clean step can reduce defect counts on product wafers and improve manufacturing cycle time and throughput by relaxing the queue time constraint.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"38 5-6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139863184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Excitonic effects in the optical absorption of gapless semiconductor α-tin near the direct bandgap 直接带隙附近无隙半导体 α-锡光学吸收中的激子效应
Journal of Vacuum Science & Technology B Pub Date : 2024-02-05 DOI: 10.1116/6.0003278
Stefan Zollner
{"title":"Excitonic effects in the optical absorption of gapless semiconductor α-tin near the direct bandgap","authors":"Stefan Zollner","doi":"10.1116/6.0003278","DOIUrl":"https://doi.org/10.1116/6.0003278","url":null,"abstract":"Most cubic semiconductors have threefold degenerate p-bonding valence bands and nondegenerate s-antibonding conduction bands. This allows strong interband transitions from the valence to the conduction bands. On the other hand, intervalence band transitions within p-bonding orbitals in conventional p-type semiconductors are forbidden at k=0 and, therefore, weak, but observable. In gapless semiconductors, however, the s-antibonding band moves down between the split-off hole band and the valence band maximum due to the Darwin shift. This band arrangement makes them three-dimensional topological insulators. It also allows strong interband transitions from the s-antibonding valence band to the p-bonding bands, which have been observed in α-tin with Fourier-transform infrared spectroscopic ellipsometry [Carrasco et al., Appl. Phys. Lett. 113, 232104 (2018)]. This manuscript presents a theoretical description of such transitions applicable to many gapless semiconductors. This model is based on k→⋅p→ theory, degenerate carrier statistics, the excitonic Sommerfeld enhancement, and screening of the transitions by many-body effects. The impact of nonparabolic bands is approximated within Kane’s 8×8k→⋅p→-model by adjustments of the effective masses. This achieves agreement with experiments.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"158 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139862750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Strain-tuned optical properties of bilayer silicon at midinfrared wavelengths 双层硅在中红外波段的应变调谐光学特性
Journal of Vacuum Science & Technology B Pub Date : 2024-02-02 DOI: 10.1116/6.0003202
K. Vishal, Z. Ji, Y. Zhuang
{"title":"Strain-tuned optical properties of bilayer silicon at midinfrared wavelengths","authors":"K. Vishal, Z. Ji, Y. Zhuang","doi":"10.1116/6.0003202","DOIUrl":"https://doi.org/10.1116/6.0003202","url":null,"abstract":"Optical properties of two-dimensional bilayer silicon have been explored at midinfrared wavelengths using density functional theory. In this work, progressive atomic structural deformation and the resultant variations in the optical properties of the bilayer silicon films were investigated under external in-plane strain. A phase transformation of the atomic structure has been observed at an applied in-plane tensile strain of 5.17%, at which the atomic lattice is changed from a low buckled to a buckle-free honeycomb structure. Evaluations of the optical properties were carried out by taking into account the inter- and intraband transitions. An abrupt change in the optical refraction index was observed at the phase transition. In addition, the buckle-free honeycomb structure presents a strain-resistive absorption edge pinned at 1.14 μm wavelength. Exceeding a strain threshold of 12.26% results in the development of both direct- and indirect-energy bandgap openings. The direct bandgap induced interband optical transitions, resulting in absorption peaks at midinfrared wavelengths and a drastic increase in the refraction index. Moreover, by adjusting the strain, the optical absorptions can be tuned in a wide range of wavelength at midinfrared from 1.5 to 11.5 μm.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"38 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139809705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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