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2010 IEEE Radiation Effects Data Workshop最新文献

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Radiation Test of 8 Bit Microcontrollers ATmega128 & AT90CAN128 8位微控制器ATmega128和AT90CAN128的辐射测试
2010 IEEE Radiation Effects Data Workshop Pub Date : 2010-07-20 DOI: 10.1109/REDW.2010.5619504
A. Schuttauf, S. Rakers, C. Daniel
{"title":"Radiation Test of 8 Bit Microcontrollers ATmega128 & AT90CAN128","authors":"A. Schuttauf, S. Rakers, C. Daniel","doi":"10.1109/REDW.2010.5619504","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619504","url":null,"abstract":"We have performed heavy ion tests of the ATmega128 and AT90CAN128 micro controller. These COTS devices have shown a quite different sensitivity to SEL/SEU errors, where the current consumption showed a step like behaviour. Detailed measurements, analyses and on-orbit rates are presented.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"252 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126829257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Radiation Hardness Characterization of a 130nm ASIC Library Technology 130nm ASIC库技术的辐射硬度表征
2010 IEEE Radiation Effects Data Workshop Pub Date : 2010-07-20 DOI: 10.1109/REDW.2010.5619510
Radu Dumitru, C. Hafer, Tzu-Wen Wu, R. Rominger, H. Gardner, P. Milliken, Kevin Bruno, T. Farris
{"title":"Radiation Hardness Characterization of a 130nm ASIC Library Technology","authors":"Radu Dumitru, C. Hafer, Tzu-Wen Wu, R. Rominger, H. Gardner, P. Milliken, Kevin Bruno, T. Farris","doi":"10.1109/REDW.2010.5619510","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619510","url":null,"abstract":"Radiation hardness characterization has been performed on a RadHard-by-Design ASIC Library designed using a 130nm commercial fab process. Test chip results are presented illustrating the ASIC library performance and radiation hardness response.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126240146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Single Event and Low Dose-Rate TID Effects in the DS16F95 RS-485 Transceiver DS16F95 RS-485收发器中的单事件和低剂量率TID效应
2010 IEEE Radiation Effects Data Workshop Pub Date : 2010-07-20 DOI: 10.1109/REDW.2010.5619503
A. Kelly, P. Fleming, Ronald D. Brown, Frankie Wong
{"title":"Single Event and Low Dose-Rate TID Effects in the DS16F95 RS-485 Transceiver","authors":"A. Kelly, P. Fleming, Ronald D. Brown, Frankie Wong","doi":"10.1109/REDW.2010.5619503","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619503","url":null,"abstract":"Characterization of single event and low dose-rate TID effects in National Semiconductor's DS16F95 Radiation-Hardened RS-485 Transceiver is eported. Onset LET for upsetof less than 5 MeV-cm2/mg was observed, and a dependency on operating condition was established. Samples under ELDRS nvestigation adhered to electrical specification after irradiation to 30 krd(Si) at 10 mrd(Si)/s.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125123048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
SEE Testing of National Semiconductor's LM98640QML System on a Chip for Focal Plane Arrays and Other Imaging Systems 美国国家半导体公司LM98640QML系统在焦平面阵列和其他成像系统芯片上的SEE测试
2010 IEEE Radiation Effects Data Workshop Pub Date : 2010-07-20 DOI: 10.1109/REDW.2010.5619498
K. Kruckmeyer, R. Eddy, Alex Szczapa, B. Brown, Tom Santiago
{"title":"SEE Testing of National Semiconductor's LM98640QML System on a Chip for Focal Plane Arrays and Other Imaging Systems","authors":"K. Kruckmeyer, R. Eddy, Alex Szczapa, B. Brown, Tom Santiago","doi":"10.1109/REDW.2010.5619498","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619498","url":null,"abstract":"National Semiconductor's LM98640QML is a complex signal processing solution interface for CCDs and CMOS imagers used in focal plane arrays and other imaging systems. This complex system on a chip (SOC) consists of an integrated 14 bit analog-to-digital converter (ADC), correlated double sampler, delay-locked loop (DLL), serial interface, digital-to-analog converters (DAC), programmable variable gain amplifiers and other components. Single event effect (SEE) characterization of a complex, precision SOC with many different operating modes can present significant challenges. Heavy ion test challenges, solutions and results are presented here.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134331586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Cross Comparison Guide for Results of Neutron SEE Testing of Microelectronics Applicable to Avionics 适用于航空电子设备的微电子中子SEE测试结果交叉比对指南
2010 IEEE Radiation Effects Data Workshop Pub Date : 2010-07-20 DOI: 10.1109/REDW.2010.5619496
E. Normand, L. Dominik
{"title":"Cross Comparison Guide for Results of Neutron SEE Testing of Microelectronics Applicable to Avionics","authors":"E. Normand, L. Dominik","doi":"10.1109/REDW.2010.5619496","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619496","url":null,"abstract":"A cross comparison of SEU, SEFI and SEL responses in >30 devices (SRAMs µprocessors and FPGAs) using different neutron/proton beams leads to observation that SEU and SEFI cross sections from 14 MeV neutrons are within <2 compared to LANL neutron beam.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121838100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 32
Sensitivity of 2 Gb DDR2 SDRAMs to Protons and Heavy Ions 2gb DDR2 dram对质子和重离子的敏感性
2010 IEEE Radiation Effects Data Workshop Pub Date : 2010-07-20 DOI: 10.1109/REDW.2010.5619491
R. Koga, P. Yu, J. George, S. Bielat
{"title":"Sensitivity of 2 Gb DDR2 SDRAMs to Protons and Heavy Ions","authors":"R. Koga, P. Yu, J. George, S. Bielat","doi":"10.1109/REDW.2010.5619491","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619491","url":null,"abstract":"SEE sensitivity to protons and heavy ions is examined with several 2 Gb DDR2 SDRAM device types. Upsets in memory elements as well as in control circuit sections have been measured.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132961440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Recent Results for PowerPC Processor and Bridge Chip Testing PowerPC处理器和桥接芯片测试的最新结果
2010 IEEE Radiation Effects Data Workshop Pub Date : 2010-07-20 DOI: 10.1109/REDW.2010.5619489
S. Guertin, F. Irom
{"title":"Recent Results for PowerPC Processor and Bridge Chip Testing","authors":"S. Guertin, F. Irom","doi":"10.1109/REDW.2010.5619489","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619489","url":null,"abstract":"Recent single event effect (SEE) test results for the Freescale 7447A and IBM 750FX microprocessors, and Marvell 64460 bridge chips are reported. The 7447A and 750FX results are compared to earlier work. The 64460 represents unique data. The data extraction methods for each test type are described. The 7447A and 750FX were found to have a single event upset (SEU) threshold of about 1 MeV-cm²/mg and saturated cross section of 2e-9 cm²/bit. Both devices have proton cross sections of about 1e-14cm²/bit and proton thresholds below 20 MeV. The 64460 was shown to have functional interrupts similar to single event latchup with threshold below 1 MeV-cm²/g and saturated cross section around 1 cm².","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133917790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Total Dose and Single Event Testing of a Hardened Single-Ended Current Mode PWM Controller 硬化单端电流型PWM控制器的总剂量和单事件测试
2010 IEEE Radiation Effects Data Workshop Pub Date : 2010-07-20 DOI: 10.1109/REDW.2010.5619502
N. V. van Vonno, L. Pearce, G. M. Wood, J. D. White, E. Thomson, T. Bernard, P. J. Chesley, R. Hood
{"title":"Total Dose and Single Event Testing of a Hardened Single-Ended Current Mode PWM Controller","authors":"N. V. van Vonno, L. Pearce, G. M. Wood, J. D. White, E. Thomson, T. Bernard, P. J. Chesley, R. Hood","doi":"10.1109/REDW.2010.5619502","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619502","url":null,"abstract":"We report results of total dose and SEE testing of the ISL7884xASRH hardened single-ended current mode PWM controller including discussion of part design, process and radiation testing results. The part is implemented in submicron BiCMOS.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133182910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Total Dose and Single Event Testing of a Hardened Point of Load Regulator 负载调节器硬化点的总剂量和单事件试验
2010 IEEE Radiation Effects Data Workshop Pub Date : 2010-07-20 DOI: 10.1109/REDW.2010.5619501
N. V. van Vonno, L. Pearce, J. S. Gill, H. W. Satterfield, E. T. Thomson, T. E. Fobes, A. P. Williams, P. J. Chesley
{"title":"Total Dose and Single Event Testing of a Hardened Point of Load Regulator","authors":"N. V. van Vonno, L. Pearce, J. S. Gill, H. W. Satterfield, E. T. Thomson, T. E. Fobes, A. P. Williams, P. J. Chesley","doi":"10.1109/REDW.2010.5619501","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619501","url":null,"abstract":"We report the results of total dose and single-event effects testing of the ISL70001SRH hardened point of load (POL) voltage regulator and discuss part design, performance and applications. The part is implemented in a submicron BiCMOS process and uses integrated power MOSFET switching transistors.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133510008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Single Event Latchup (SEL) and Total Ionizing Dose (TID) of a 1 Mbit Magnetoresistive Random Access Memory (MRAM) 1mb磁阻随机存取存储器(MRAM)的单事件闭锁(SEL)和总电离剂量(TID)
2010 IEEE Radiation Effects Data Workshop Pub Date : 2010-07-20 DOI: 10.1109/REDW.2010.5619499
J. Heidecker, G. Allen, D. Sheldon
{"title":"Single Event Latchup (SEL) and Total Ionizing Dose (TID) of a 1 Mbit Magnetoresistive Random Access Memory (MRAM)","authors":"J. Heidecker, G. Allen, D. Sheldon","doi":"10.1109/REDW.2010.5619499","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619499","url":null,"abstract":"A 1 Mbit MRAM, a nonvolatile memory that uses magnetic tunnel junction (MJT) storage elements, has been characterized for total ionizing dose (TID) and single event latchup (SEL). Our results indicate that these devices show no single event latchup up to an effective LET of 84 MeV-cm2/mg (where our testing ended) and no bit failures to a TID of 75 krad (Si).","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123524168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
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