N. V. van Vonno, L. Pearce, J. S. Gill, H. W. Satterfield, E. T. Thomson, T. E. Fobes, A. P. Williams, P. J. Chesley
{"title":"Total Dose and Single Event Testing of a Hardened Point of Load Regulator","authors":"N. V. van Vonno, L. Pearce, J. S. Gill, H. W. Satterfield, E. T. Thomson, T. E. Fobes, A. P. Williams, P. J. Chesley","doi":"10.1109/REDW.2010.5619501","DOIUrl":null,"url":null,"abstract":"We report the results of total dose and single-event effects testing of the ISL70001SRH hardened point of load (POL) voltage regulator and discuss part design, performance and applications. The part is implemented in a submicron BiCMOS process and uses integrated power MOSFET switching transistors.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radiation Effects Data Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/REDW.2010.5619501","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 21
Abstract
We report the results of total dose and single-event effects testing of the ISL70001SRH hardened point of load (POL) voltage regulator and discuss part design, performance and applications. The part is implemented in a submicron BiCMOS process and uses integrated power MOSFET switching transistors.