Single Event and Low Dose-Rate TID Effects in the DS16F95 RS-485 Transceiver

2010 IEEE Radiation Effects Data Workshop Pub Date : 2010-07-20 DOI:10.1109/REDW.2010.5619503

A. Kelly, P. Fleming, Ronald D. Brown, Frankie Wong

引用次数: 4

Abstract

Characterization of single event and low dose-rate TID effects in National Semiconductor's DS16F95 Radiation-Hardened RS-485 Transceiver is eported. Onset LET for upsetof less than 5 MeV-cm2/mg was observed, and a dependency on operating condition was established. Samples under ELDRS nvestigation adhered to electrical specification after irradiation to 30 krd(Si) at 10 mrd(Si)/s.

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DS16F95 RS-485收发器中的单事件和低剂量率TID效应

报道了美国国家半导体公司DS16F95辐射硬化RS-485收发器中单事件和低剂量率TID效应的表征。小于5 MeV-cm2/mg的起病LET被观察到，并且与操作条件有关。ELDRS调查的样品在以10 mrd /s照射至30 krd(Si)后符合电气规范。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2010 IEEE Radiation Effects Data Workshop

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