2010 IEEE Radiation Effects Data Workshop最新文献_第2页

Single Event Transient and ELDRS Characterization Test Results for LM4050QML 2.5V Precision Reference LM4050QML 2.5V精密基准单事件瞬态和ELDRS特性测试结果

2010 IEEE Radiation Effects Data Workshop Pub Date : 2010-07-20 DOI: 10.1109/REDW.2010.5619582

K. Kruckmeyer, Elisa Morozumi, R. Eddy, T. Trinh, Tom Santiago, P. Maillard

引用次数: 4

Radiation Testing a Very Low-Noise RHBD ASIC Electrometer 极低噪声RHBD ASIC静电计的辐射测试

2010 IEEE Radiation Effects Data Workshop Pub Date : 2010-07-20 DOI: 10.1109/REDW.2010.5619512

A. Jones, D. O'Connor, E. Thiemann, V. A. Drake, Gregory Newcomb, Neil R. White, D. Aalami, H. Clark, R. Ladbury, B. von Przewoski, Sharon E. Dooley, Seth Finkelstein, P. Haskins, Vicki Wei Hsu, B. Kirby, T. Reese, Patricia Soto Hoffmann

{"title":"Radiation Testing a Very Low-Noise RHBD ASIC Electrometer","authors":"A. Jones, D. O'Connor, E. Thiemann, V. A. Drake, Gregory Newcomb, Neil R. White, D. Aalami, H. Clark, R. Ladbury, B. von Przewoski, Sharon E. Dooley, Seth Finkelstein, P. Haskins, Vicki Wei Hsu, B. Kirby, T. Reese, Patricia Soto Hoffmann","doi":"10.1109/REDW.2010.5619512","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619512","url":null,"abstract":"We report the results of Single Event Effect (SEE) and Total Integrated Dose (TID) testing of a very-low-noise six-channel electrometer Application Specific Integrated Circuit (ASIC) constructed through the MOSIS service using the ON Semiconductor C5N process. The ASICs were designed using Radiation Hard By Design (RHBD) layout rules, and TID mitigation strategies. This testing provides a verification that the device does not show latch-up behavior, and that performance is not unduly compromised by TID. The SEE testing, using heavy ions, took place at the Single Event Effects Facility at Texas A&M University using the 24.8~MeV/u beam with ions Ar, Kr, and Xe giving a range of Linear Energy Transfer (LET) at the device of 7.5-63.5 MeV cm2/mg. No latch-ups were seen even at an elevated temperature (30C). TID testing using protons was conducted at the Indiana University Cyclotron Facility on the Radiation Effects Research Program RERS2 beamline. Parts were tested to a total dose of 300 krad(Si). As these ASICs are constructed using CMOS technology there will be no Enhanced Low Dose Rate Sensitivity (ELDRS)","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121871014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

TID and SEE Responses of Rad-Hardened A/D Converters ad硬化A/D转换器的TID和SEE响应

2010 IEEE Radiation Effects Data Workshop Pub Date : 2010-07-20 DOI: 10.1109/REDW.2010.5619500

G. Chaumont, Andre Uguen, C. Prugne, F. Malou

引用次数: 2

Performance of Commercial Off-the-Shelf Microelectromechanical Systems Sensors in a Pulsed Reactor Environment 商用现成微机电系统传感器在脉冲电抗器环境中的性能

2010 IEEE Radiation Effects Data Workshop Pub Date : 2010-07-20 DOI: 10.1109/REDW.2010.5619509

Keith E. Holbert, A. Sharif Heger, S. McCready

引用次数: 5

Hardening of Texas Instruments' VC33 DSP 德州仪器VC33 DSP的加固

2010 IEEE Radiation Effects Data Workshop Pub Date : 2010-07-20 DOI: 10.1109/REDW.2010.5619513

R. Fuller, W. Morris, D. Gifford, R. Lowther, Jon Gwin, J. Salzman, D. Alexander, K. Hunt

引用次数: 2

Guide to the 2009 IEEE Radiation Effects Data Workshop Record 2009年IEEE辐射效应数据研讨会记录指南

2010 IEEE Radiation Effects Data Workshop Pub Date : 2010-07-20 DOI: 10.1109/REDW.2010.5619488

D. Hiemstra

引用次数: 12

ELDRS Characterization for a Very High Dose Mission 高剂量任务的ELDRS特性

2010 IEEE Radiation Effects Data Workshop Pub Date : 2010-07-20 DOI: 10.1109/REDW.2010.5619505

Richard D. Harris, S. McClure, B. Rax, Dennis O. Thornbourn, A. Kenna, K. Clark, Tsun-Yee Yan

{"title":"ELDRS Characterization for a Very High Dose Mission","authors":"Richard D. Harris, S. McClure, B. Rax, Dennis O. Thornbourn, A. Kenna, K. Clark, Tsun-Yee Yan","doi":"10.1109/REDW.2010.5619505","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619505","url":null,"abstract":"Evaluation of bipolar linear parts which may have Enhanced Low Dose Rate Sensitivity (ELDRS) is problematic for missions that have very high dose radiation requirements. The accepted standards for evaluating parts that display ELDRS require testing at a very low dose rate which could be prohibitively long for very high dose missions. In this work, a methodology for ELDRS characterization of bipolar parts for mission doses up to 1 Mrad(Si) is evaluated. The procedure employs an initial dose rate of 0.01 rad(Si)/s to a total dose of 50 krad(Si) and then changes to 0.04 rad(Si)/s to a total dose of 1 Mrad(Si). This procedure appears to work well. No change in rate of degradation with dose has been observed when the dose rate is changed from 0.01 to 0.04 rad(Si)/s. This is taken as an indication that the degradation due to the higher dose rate is equivalent to that at the lower dose rate at the higher dose levels, at least for the parts studied to date. In several cases, significant parameter degradation or functional failure not observed at HDR was observed at LDR at fairly high total doses (50 to 250 krad(Si)). This behavior calls into question the use of dose rate trend data and enhancement factors to predict LDR performance.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133068463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

SEE Results for a 4-Port SpaceWire Router 参见4端口SpaceWire路由器的结果

2010 IEEE Radiation Effects Data Workshop Pub Date : 2010-07-20 DOI: 10.1109/REDW.2010.5619493

C. Hafer, B. Baranski, J. Larsen, F. Sievert, A. Jordan

引用次数: 1

Comparison of TID Response of Micron Technology Single-Level Cell High Density NAND Flash Memories 微米技术单能级高密度NAND快闪记忆体的TID响应比较

2010 IEEE Radiation Effects Data Workshop Pub Date : 2010-07-20 DOI: 10.1109/REDW.2010.5619508

D. Nguyen, F. Irom

引用次数: 4

90-nm Digital Single Event Transient Pulsewidth Measurements 90纳米数字单事件瞬态脉冲宽度测量

2010 IEEE Radiation Effects Data Workshop Pub Date : 2010-07-20 DOI: 10.1109/REDW.2010.5619492

R. Lawrence, J. Ross, Neil E. Wood

引用次数: 3