微米技术单能级高密度NAND快闪记忆体的TID响应比较

2010 IEEE Radiation Effects Data Workshop Pub Date : 2010-07-20 DOI:10.1109/REDW.2010.5619508

D. Nguyen, F. Irom

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引用次数: 4

摘要

报道了美光单级单元(SLC) 1gb、2gb、4gb和8gb NAND闪存的总电离剂量(TID)响应。讨论了TID响应的尺度效应。浮动门误码随特征尺寸的增大而增大。此外，电荷泵的TID退化和待机电流也随缩放而改善。

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Comparison of TID Response of Micron Technology Single-Level Cell High Density NAND Flash Memories

Total ionizing dose (TID) response for Micron Technology single-level cell (SLC) 1 Gb, 2 Gb, 4 Gb and 8 Gb NAND flash memories are reported. Scaling effects in TID response is discussed. Floating gates bit error scales with feature size. Also, charge pump TID degradation and standby current improves with scaling.

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2010 IEEE Radiation Effects Data Workshop

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