18th International Reliability Physics Symposium最新文献_第2页

Moisture Evolution from Sealing Glasses: Dry CERDIP Packages 从密封玻璃的水分演变:干燥CERDIP包装

18th International Reliability Physics Symposium Pub Date : 1980-04-01 DOI: 10.1109/IRPS.1980.362905

R. Vasofsky, R. Lowry

{"title":"Moisture Evolution from Sealing Glasses: Dry CERDIP Packages","authors":"R. Vasofsky, R. Lowry","doi":"10.1109/IRPS.1980.362905","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362905","url":null,"abstract":"In this investigation the moisture evolution properties of vitreous sealing glasses were evaluated to assess process approaches for producing hermetic CERDIP packages with greatly reduced levels of encapsulated moisture. Four types of commercially-glazed glasses of the KC-series, as supplied on CERDIP lids, were heated in vacuum at 430°C for 3h. During this period the identity, quantity, and evolution rate of gaseous components were measured. In parallel experiments the moisture contents of CERDIP packages sealed with KC-1 and KC-1M glasses were measured for unbaged parts and for parts preseal baked at 150°C for 2h. The outgassing studies show that the quantity and rate of moisture evolution from KC-1 and KC-1M sealing glasses depend in part on the way the glass was initially glazed on the alumina lid: the quantity of water outgassed from glass glazed in the \"standard manner\" is greater than the amount evolved-from the glass glazed using the \"super dry\" process. However, the quantity of water outgassed during the first 10 min of heating at 430°C from all 4 sample types, KC-1 (standard), KC-1 (super-dry), KC-1M (standard) and KC-1M (super dry) was sufficiently high to indicate that if sealing occurred during this initial 10 min period the moisture content inside the sealed cavity could exceed 5000 ppmv. Hence a preseal bake of vitreous-glazed package piece parts can contribute substantially to producing dry cavities. The most important factor in determining duration of a preseal bake is rate of-moisture evolution from the glass.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114675848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Small Area Raman Photoluminescence and Cathodoluminescence as Complementary Analytical Techniques for Electronic Materials 电子材料小面积拉曼光致发光与阴极发光互补分析技术

18th International Reliability Physics Symposium Pub Date : 1980-04-01 DOI: 10.1109/IRPS.1980.362943

J. N. Ramsey

引用次数: 1

Data Retention in EPROMS eprom中的数据保留

18th International Reliability Physics Symposium Pub Date : 1980-04-01 DOI: 10.1109/IRPS.1980.362947

R. E. Shiner, J. Caywood, B. Euzent

引用次数: 47

Failure Analysis and Reliability of Thermal Printing Devices 热敏印刷设备的失效分析与可靠性

18th International Reliability Physics Symposium Pub Date : 1980-04-01 DOI: 10.1109/IRPS.1980.362945

L. C. Wagner

{"title":"Failure Analysis and Reliability of Thermal Printing Devices","authors":"L. C. Wagner","doi":"10.1109/IRPS.1980.362945","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362945","url":null,"abstract":"Silicon thermal printing devices present, very real challenges to both the failure analyst and reliability engineer. These devices are unusual in several ways. They are intended for operation of the active areas at temperatures above those normally experienced silicon devices. Thermal conductivity plays an inordinately significant role in the operation and particularly the lifetime of the device. This fact makes analysis and control of the materials thermally surrounding electronically active areas as important as the active areas themselves. The typical structurel is illustrated in figure 1 which shows the individual printing element or mesa which is used as a heating element employing current flow through the bulk resistivity of the mesa to generate heat. The mesa heat is then dissipated through the paper and through the epoxy tb the ceramic substrate. The mesas may be arranged in matrices or lines as illustrated in figure 2. In addition to the thermal and electrical characteristics of the device, device lifetime is ultimately limited by mechanical wear, i.e. abrasion against the paper. Thus the devices cannot be viewed in an electronic vacuum but must be viewed as a thermo-mechanical electronic system which puts an added stress on normal reliability and failure analysis functions.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126546794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mechanism of Ceramic Capacitor Leakage Failures due to Low DC Stress 陶瓷电容器低直流应力泄漏失效机理研究

18th International Reliability Physics Symposium Pub Date : 1980-04-01 DOI: 10.1109/IRPS.1980.362940

Ken Sato, Y. Ogata, K. Ohno, H. Ikeo

引用次数: 17

A Large Scale Reliability Study of Burnout Failure in GaAs Power FETs GaAs功率场效应管烧毁失效的大规模可靠性研究

18th International Reliability Physics Symposium Pub Date : 1980-04-01 DOI: 10.1109/IRPS.1980.362928

A. S. Jordan, J. Irvin, W. Schlosser

引用次数: 10

Gaas Mixer Diode Burnout Mechanisms at 36-94 GHz 36-94 GHz Gaas混频器二极管燃烬机制

18th International Reliability Physics Symposium Pub Date : 1980-04-01 DOI: 10.1109/IRPS.1980.362930

A. Christou, Y. Anand

引用次数: 2

Generic Reliability of the High-Conductivity TaSi2/n+ Poly-Si Gate MOS Structure 高电导率TaSi2/n+多晶硅栅极MOS结构的一般可靠性

18th International Reliability Physics Symposium Pub Date : 1980-04-01 DOI: 10.1109/IRPS.1980.362933

A. K. Sinha, D. Fraser, S. Murarka

引用次数: 0

Moisture Uptake and Release by Plastic Molding Compoundsits Relationship to System Life and Failure Mode 塑料成型复合材料吸湿和释湿与系统寿命和失效模式的关系

18th International Reliability Physics Symposium Pub Date : 1980-04-01 DOI: 10.1109/IRPS.1980.362956

D. W. Dycus

引用次数: 5

Failure Analysis of Multilayer Ceramic Substrates 多层陶瓷基板的失效分析

18th International Reliability Physics Symposium Pub Date : 1980-04-01 DOI: 10.1109/IRPS.1980.362944

G. Walker

引用次数: 1