18th International Reliability Physics Symposium最新文献

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Alpha-Particle-Induced Soft Errors and 64K Dynamic RAM Design Interaction α粒子诱导软误差与64K动态RAM设计交互
18th International Reliability Physics Symposium Pub Date : 1980-04-01 DOI: 10.1109/IRPS.1980.362951
R. McPartland, J. T. Nelson, W. R. Huber
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引用次数: 10
Experimental Studies of ZnS Alpha Particle Counters and Methods for Minimizing Detector Background ZnS α粒子计数器的实验研究及最小化探测器背景的方法
18th International Reliability Physics Symposium Pub Date : 1980-04-01 DOI: 10.1109/IRPS.1980.362953
B. Masters
{"title":"Experimental Studies of ZnS Alpha Particle Counters and Methods for Minimizing Detector Background","authors":"B. Masters","doi":"10.1109/IRPS.1980.362953","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362953","url":null,"abstract":"The zinc sulfide scintillation counter employed at IBM for low-level alpha flux monitoring of device and packaging materials is described. This counter provides almost 100% counting efficiency for alpha particles of 1.5MeV or greater energy emitted from the surface of planar samples up to 130 cm2 in area, and exhibits a sea level background count rate on the order of 0.005 counts/cm2-hr. The contributions of electrical noise, cosmic radiation, and radioactive contamination to this background count rate have been studied experimentally. For near sea level operation, only the cosmic ray and radioactivity contributions are found to be significant. At 50°N geomagnetic latitude, the sea level contribution from cosmic ray interactions appears to be about 0.003 counts/cm2-hr. This component is strongly dependent upon altitude, increasing to about 0.1 counts/cm2-hr. at an altitude of 4.36 km. In the presence of very heavy external shielding, total backgrounds on the order of 0.002 counts/cm2-hr. may be realized, and this residual is attributed primarily to naturally-occurring radioactive contaminants which are present in the construction materials of the detector.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117140886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
SEM Techniques for the Analysis of Memory Circuits 存储电路分析的扫描电镜技术
18th International Reliability Physics Symposium Pub Date : 1980-04-01 DOI: 10.1109/IRPS.1980.362914
J. R. Beall, D. Wilson, W. Echols, LT. M. J. Walter
{"title":"SEM Techniques for the Analysis of Memory Circuits","authors":"J. R. Beall, D. Wilson, W. Echols, LT. M. J. Walter","doi":"10.1109/IRPS.1980.362914","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362914","url":null,"abstract":"Seven semiconductor memory device types were used to evaluate the application of the Scanning Electron Microscope (SEM) to LSI -circuit. anal'ysis. The objective was to develop the necessary SEM methodology for the characterization and failure analysis of complex circuits. The SEM imaging capabilities were evaluated to identify practical methods and limitations for circuit characterization and for isolation of circuit failures.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"436 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126116293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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