α粒子诱导软误差与64K动态RAM设计交互

R. McPartland, J. T. Nelson, W. R. Huber
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引用次数: 10

摘要

设计了一个n通道64K动态RAM,其α粒子诱导的软错误率接近每107设备小时(100 FITS)一个软错误。影响软误差率的主要设计考虑因素是有效电池电荷、信号退化噪声、放大器对柱阻抗、多晶硅柱布局和放大器布局。利用SPICE模拟了细胞、柱和感测放大器α粒子引起的软误差。介绍了传感放大器软误差的三种类型。其中两种几乎可以通过足够的信号消除,而另一种则不能并且受感测放大器对列阻抗的强烈影响。通过加速测量α粒子引起的软错误率,模拟预测得到了证实。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Alpha-Particle-Induced Soft Errors and 64K Dynamic RAM Design Interaction
An n-channel 64K dynamic RAM has been designed having an alpha particle induced soft error rate near one soft error per 107 device hours (100 FITS). Primary design considerations affecting the soft error rate are effective cell charge, signal degrading noise, sense amplifier to column impedance, polysilicon column layout and sense amplifier layout. Cell, column and sense amplifier alpha particle induced soft errors have been simulated using SPICE. Three classifications of sense amplifier soft errors have been illustrated. Two can be nearly eliminated by adequate signal, the other cannot and is strongly influenced by the sense amplifier to column impedance. Predictions by simulation have been confirmed by accelerated measurements of alpha particle induced soft error rates.
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