存储电路分析的扫描电镜技术

18th International Reliability Physics Symposium Pub Date : 1980-04-01 DOI:10.1109/IRPS.1980.362914

J. R. Beall, D. Wilson, W. Echols, LT. M. J. Walter

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引用次数: 1

摘要

采用7种半导体存储器件，评价了扫描电子显微镜(SEM)在大规模集成电路中的应用。肛门'ysis。目的是发展必要的SEM方法表征和失效分析的复杂电路。对扫描电镜成像能力进行了评估，以确定电路表征和电路故障隔离的实用方法和限制。

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SEM Techniques for the Analysis of Memory Circuits

Seven semiconductor memory device types were used to evaluate the application of the Scanning Electron Microscope (SEM) to LSI -circuit. anal'ysis. The objective was to develop the necessary SEM methodology for the characterization and failure analysis of complex circuits. The SEM imaging capabilities were evaluated to identify practical methods and limitations for circuit characterization and for isolation of circuit failures.

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18th International Reliability Physics Symposium

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