{"title":"高电导率TaSi2/n+多晶硅栅极MOS结构的一般可靠性","authors":"A. K. Sinha, D. Fraser, S. Murarka","doi":"10.1109/IRPS.1980.362933","DOIUrl":null,"url":null,"abstract":"Results are presented on the generic reliability of the TaSi2/n+ poly-Si gate structure which has a stable sheet resistance of ~2 ohm/sq and which retrofits into the conventional n-channel Si-gate process sequence. The MOS and IGFET parameters are well-behaved, i.e., determined by the n+ poly-Si layer of the composite. The static and dynamic bias-temperature stabilities are excellent for the presently employed sequence of process steps. Certain process and structure limitations do exist, and these have been defined.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Generic Reliability of the High-Conductivity TaSi2/n+ Poly-Si Gate MOS Structure\",\"authors\":\"A. K. Sinha, D. Fraser, S. Murarka\",\"doi\":\"10.1109/IRPS.1980.362933\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Results are presented on the generic reliability of the TaSi2/n+ poly-Si gate structure which has a stable sheet resistance of ~2 ohm/sq and which retrofits into the conventional n-channel Si-gate process sequence. The MOS and IGFET parameters are well-behaved, i.e., determined by the n+ poly-Si layer of the composite. The static and dynamic bias-temperature stabilities are excellent for the presently employed sequence of process steps. Certain process and structure limitations do exist, and these have been defined.\",\"PeriodicalId\":270567,\"journal\":{\"name\":\"18th International Reliability Physics Symposium\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1980-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"18th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1980.362933\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"18th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1980.362933","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Generic Reliability of the High-Conductivity TaSi2/n+ Poly-Si Gate MOS Structure
Results are presented on the generic reliability of the TaSi2/n+ poly-Si gate structure which has a stable sheet resistance of ~2 ohm/sq and which retrofits into the conventional n-channel Si-gate process sequence. The MOS and IGFET parameters are well-behaved, i.e., determined by the n+ poly-Si layer of the composite. The static and dynamic bias-temperature stabilities are excellent for the presently employed sequence of process steps. Certain process and structure limitations do exist, and these have been defined.
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