A Large Scale Reliability Study of Burnout Failure in GaAs Power FETs

Abstract

Burnout can be the dominant failure mode in GaAs power FETs. Since this is a process without electrical precursors, special experimental and statistical treatment appropriate to censored data has to be employed. The resulting failure distribution is log-normal and depending on the operating conditions a maximum failure rate between 400 and 4500 FITs is projected.