GaAs功率场效应管烧毁失效的大规模可靠性研究

18th International Reliability Physics Symposium Pub Date : 1980-04-01 DOI:10.1109/IRPS.1980.362928

A. S. Jordan, J. Irvin, W. Schlosser

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引用次数: 10

摘要

烧坏是GaAs功率场效应管的主要失效模式。由于这是一个没有电前体的过程，因此必须采用适合审查数据的特殊实验和统计处理。所得到的故障分布是对数正态分布，根据运行条件，预计最大故障率在400到4500 FITs之间。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Large Scale Reliability Study of Burnout Failure in GaAs Power FETs

Burnout can be the dominant failure mode in GaAs power FETs. Since this is a process without electrical precursors, special experimental and statistical treatment appropriate to censored data has to be employed. The resulting failure distribution is log-normal and depending on the operating conditions a maximum failure rate between 400 and 4500 FITs is projected.

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18th International Reliability Physics Symposium

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