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Fast Settling 9GHz PLL Using 528MHz Reference PLL Clock for MB-OFDM UWB System 基于528MHz参考锁相环时钟的MB-OFDM UWB系统快速定位9GHz锁相环
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282781
Young Jae Lee, S. Hyun, Geum-Young Tak, Hyun-Kyu Yu
{"title":"Fast Settling 9GHz PLL Using 528MHz Reference PLL Clock for MB-OFDM UWB System","authors":"Young Jae Lee, S. Hyun, Geum-Young Tak, Hyun-Kyu Yu","doi":"10.1109/EMICC.2006.282781","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282781","url":null,"abstract":"A CMOS phase-locked loop (PLL) which synthesizes frequencies between 6.336~8.976GHz in steps of 528MHz and settles in approximately 150ns using the 528MHz reference clock is presented. Frequency hopping between the bands in the each mode is critical point to design the PLL in the multi-band orthogonal frequency division multiplexing (OFDM) because the frequency switching between each band is less than 9.5ns. To achieve the fast loop settling, the integer-N PLL that operates with the high reference frequency to meet the settling requirement is implemented. Two PLLs that operate at the 9GHz and 528MHz are integrated and shows the band hopping lower than 1ns","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123883902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-Temperature DC and RF Measurement and Modelling of InGaAs-InAlAs Resonant Tunneling Diodes down to 15 K 低至15k的InGaAs-InAlAs谐振隧道二极管的低温直流和射频测量与建模
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282652
A. Matiss, W. Brockerhoff, A. Poloczek, W. Prost, F. Tegude
{"title":"Low-Temperature DC and RF Measurement and Modelling of InGaAs-InAlAs Resonant Tunneling Diodes down to 15 K","authors":"A. Matiss, W. Brockerhoff, A. Poloczek, W. Prost, F. Tegude","doi":"10.1109/EMICC.2006.282652","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282652","url":null,"abstract":"The influence of temperature on bias dependent small-signal equivalent circuit components of a resonant tunneling diode (RTD) is investigated from 290 K down to 15 K. The RTD model based on bias dependent parasitic elements and the quantum capacitance as well as the quantum conductance is fitted to both, on-wafer DC and RF S-parameter measurements from 45 MHz to 40 GHz over a bias range of 0 V to 0.80 V. For the full temperature range, good agreement between extracted and measured parameters is shown","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121309857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Advanced 3D Packaging using Novel Liquid Crystalline Polymer Based Substrates 采用新型液晶聚合物基基片的先进3D封装
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282704
C. Ghiu, S. Dalmia, J. Vickers, L. Carastro, W. Czakon, V. Sundaram, G. White
{"title":"Advanced 3D Packaging using Novel Liquid Crystalline Polymer Based Substrates","authors":"C. Ghiu, S. Dalmia, J. Vickers, L. Carastro, W. Czakon, V. Sundaram, G. White","doi":"10.1109/EMICC.2006.282704","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282704","url":null,"abstract":"This paper presents the performance of 3D packaging solutions based on novel multilayered organic substrates. Electrical performance of embedded RF passives over 950 MHz to 3 GHz frequency range and stability from -40degC to 85degC has been demonstrated in an organic laminate substrate. Stand-alone, high Q inductors built on a multilayered liquid crystalline polymer (LCP)-based substrate can withstand a 2A direct current with the temperatures well within the safe range. The power handling capability of surface mounted IPDs is also assessed in this study. Reliability test data demonstrated the multilayer substrate compatibility with 1times and 3times lead free solder reflow. A promising high temperature LCP material enabled a significant improvement in the stability of electrical performance after 3times reflow at 260 degC","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123639667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaAs Power pHEMT Characterization for Extracting Nonlinear Parameters of Drain Current by Harmonic Measurement 利用谐波测量提取漏极电流非线性参数的GaAs功率pHEMT表征
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282674
Kuan-Yu Chen, Chien-Chang Huang
{"title":"GaAs Power pHEMT Characterization for Extracting Nonlinear Parameters of Drain Current by Harmonic Measurement","authors":"Kuan-Yu Chen, Chien-Chang Huang","doi":"10.1109/EMICC.2006.282674","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282674","url":null,"abstract":"This paper presents a simple method to extract nonlinear parameters of GaAs pseudomorphic high electron mobility transistor (pHEMT) for Volterra-Series analysis. With measuring the harmonic powers and phase polarities at various attenuations, the nonlinear parameters could be solved in least-square sense to reduce the measured uncertainties. The extracted data are validated by the two-tone measurements for a wide-range bias sweep","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123761131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A C-Band Oscillator MMIC with High Output Power, Low Harmonics, and Low Phase Noise using Passive Buffer 一种采用无源缓冲器的高输出功率、低谐波和低相位噪声的c波段振荡器MMIC
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282779
Sanghoon Sim, Songcheol Hong
{"title":"A C-Band Oscillator MMIC with High Output Power, Low Harmonics, and Low Phase Noise using Passive Buffer","authors":"Sanghoon Sim, Songcheol Hong","doi":"10.1109/EMICC.2006.282779","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282779","url":null,"abstract":"A passive buffer of an oscillator to obtain high output power, low harmonics and low phase noise is presented. A cross-coupled oscillator with the passive buffer is fabricated using InGaP/GaAs HBT technology. The oscillation frequency is 6.96 GHz. The 2nd harmonic suppression is -36.23dBc in the one-side output power 9.43 dBm. The phase noise is -121.33 dBc/Hz at 1MHz offset. The chip size is 0.81 times 0.63 mm2. The performances are compared with those of the previously reported oscillators","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124840316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
77GHz Low Noise Sub Block MMICs with 120 nm In0.4AlAs/In0.35GaAs Metamorphic HEMTs 采用120nm In0.4AlAs/In0.35GaAs变质HEMTs的77GHz低噪声亚块mmic
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282761
Sungwon Kim, Dong-Hwan Kim, Jin-churl Her, Kyung-Chul Jang, W. Choi, Y. Kwon, K. Seo
{"title":"77GHz Low Noise Sub Block MMICs with 120 nm In0.4AlAs/In0.35GaAs Metamorphic HEMTs","authors":"Sungwon Kim, Dong-Hwan Kim, Jin-churl Her, Kyung-Chul Jang, W. Choi, Y. Kwon, K. Seo","doi":"10.1109/EMICC.2006.282761","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282761","url":null,"abstract":"77 GHz CPW low noise sub block (LNB) MMICs, which are consisted of a 3 stage LNA and a resistive mixer, have been successfully developed by using 120nm In0.4AlAs/In0.35GaAs metamorphic high electron mobility transistors (MHEMTs). The devices show an extrinsic transconductance gm of 760 mS/mm, a maximum drain current of 750 mA/mm, and a gate drain breakdown voltage of -8.5 V. A cut-off frequency (fT) of 172 GHz and a maximum oscillation frequency (fmax) of over 300 GHz are achieved. The LNA exhibited small signal gain of 19.2 dB and conversion gain of the LNB is measured to be 11 dB at 500 kHz IF","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121800361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Detailed Analysis of IMD of HBT PA Based on VBIC Model 基于VBIC模型的HBT PA IMD详细分析
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282678
J. Aikio, J. Vuolevi, T. Rahkonen
{"title":"Detailed Analysis of IMD of HBT PA Based on VBIC Model","authors":"J. Aikio, J. Vuolevi, T. Rahkonen","doi":"10.1109/EMICC.2006.282678","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282678","url":null,"abstract":"In this paper a recently proposed detailed distortion analysis technique is extended to apply in a rather complex VBIC model that contains multidimensional current and charge models. The technique is implemented on top of normal harmonic balance simulation, and it is based on fitting polynomial models for all nonlinear I-V and Q-V sources of the device, and using these to calculate the various contributions of IM3 distortion. The technique is used to analyze a 2 GHz InGa pHBT power amplifier that shows strong bandwidth dependent signal-induced bias shift","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130632663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Simplified RF-MEMS Switches Using Implanted Conductors and Thermal Oxide 使用植入导体和热氧化物的简化RF-MEMS开关
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EUMC.2006.281477
C. Siegel, V. Ziegler, B. Schonlinner, U. Prechtel, H. Schumacher
{"title":"Simplified RF-MEMS Switches Using Implanted Conductors and Thermal Oxide","authors":"C. Siegel, V. Ziegler, B. Schonlinner, U. Prechtel, H. Schumacher","doi":"10.1109/EUMC.2006.281477","DOIUrl":"https://doi.org/10.1109/EUMC.2006.281477","url":null,"abstract":"This paper presents microwave capacitive RF-MEMS switches based on a novel simplified fabrication process. The devices are fabricated on a silicon substrate using only one metallisation layer. For the capacitive coupling of the switch, an implanted conductive region and thermally grown silicon oxide is used instead of a second metal layer and an additional dielectric layer. In addition, the formerly used bimorph metallisation layer is replaced by a single-metallisation concept, which results in an increased temperature range of operation. The simplified process as well as the switch topology used lead to high performance and highly reliable RF-MEMS switches. RF-measurement results are presented of Ku- and K-band series switches and a Ka-band parallel switch with low insertion losses between -0.2dB and -0.3dB and isolation of e.g. -17dB at 30GHz","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122162861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
GaN HEMT Performance - Measurements and Simulations of a 3.6 mm Device from Cree GaN HEMT性能-来自Cree的3.6 mm器件的测量和模拟
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282689
A. Madjar, Z. Turski, Yifei Li
{"title":"GaN HEMT Performance - Measurements and Simulations of a 3.6 mm Device from Cree","authors":"A. Madjar, Z. Turski, Yifei Li","doi":"10.1109/EMICC.2006.282689","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282689","url":null,"abstract":"The premise of GaN HEMT devices to offer superior power amplification performance in microwave frequencies lead to an extensive research in this field, and to numerous publications emphasizing individual performance records such as, current & power densities, linearity and break down voltage. The performance of these, primarily experimental devices, is often reported in the terms of their intended applications, offering either the saturated output power, or 3dB compressed output power, or OFDM and CDMA waveform-specific output power, making the comparison among the devices, and a comparison with other technologies such as LDMOS & GaAs rather difficult. The authors are engaged in the design of a wideband (10:1 BW) 50W @ 1dB compression point linear power amplifier operating up to 2GHz. As a step in this process we determine the performance of an actual, 3.6 mm periphery, pre-production GaN HEMT from CREE. The device performance is simulated using CREE model, and it is compared with the measurements we have taken, both reported in this paper. The results obtained exhibit good convergence with the model, and are presented using the more common performance parameters such as power and efficiency at 1dB compression point, and the linearity in terms of IP3","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126547492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Low-Loss Microstrip Surface-Mount K-Band Package 低损耗微带表面贴装k波段封装
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282702
K. Entesari, Gabriel M. Rebeiz
{"title":"A Low-Loss Microstrip Surface-Mount K-Band Package","authors":"K. Entesari, Gabriel M. Rebeiz","doi":"10.1109/EMICC.2006.282702","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282702","url":null,"abstract":"This paper presents a hermetic-compatible surface mount package for microstrip structures designed for K-band applications. The microstrip lines, fabricated on a 250 mum-thick alumina substrate are packaged using a 280 mum-thick silicon cap wafer and gold-gold thermo-compression bonding. A 130 mum cavity is etched in the cap wafer to allow ample space for RF MEMS devices, surface- or bulk-wave acoustic filters, power amplifiers, or multi-chip assemblies. A via-hole transition is used to connect the microstrip line inside the package to the coplanar waveguide (CPW) line on the back side of the alumina wafer. The gold sealing ring is connected to the microstrip ground using via-holes through the alumina wafer to eliminate any parasitic resonance modes and to improve the isolation between the input and output ports. A packaged microstrip line with total dimensions of 2.6 mm has a measured insertion loss and return loss of less than 0.5 dB and 18 dB, respectively, at DC-23 GHz","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127821777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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