发布求助
文献互助 智能选刊 最新文献

2006 European Microwave Integrated Circuits Conference最新文献

筛选
英文 中文
High Intercept Point, Broadband, Cost-Effective, and Power-Efficient Passive Reflection FET DBM 高截距点，宽带，经济高效，功率高效的无源反射FET DBM
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282784
U. Rohde, A. Poddar
{"title":"High Intercept Point, Broadband, Cost-Effective, and Power-Efficient Passive Reflection FET DBM","authors":"U. Rohde, A. Poddar","doi":"10.1109/EMICC.2006.282784","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282784","url":null,"abstract":"A high intercept points, broadband, cost-effective and power-efficient passive reflection FET double balanced mixer (DBM) is reported. This paper is based on novel approach that gives intercept points (IP3) in excess of 42dB in and conversion loss less than 9.5 dB with the LO power typically 17dBm throughout the frequency bands (RF: 600-2500MHz, LO: 550-2300MHz, IF: 50-200MHz). The interport isolation is better than 30 dB for broadband applications, and the circuit topology is not limited to these frequencies, and can be easily extended for present and later generation of communication systems","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125079552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Low-Frequency Noise Measurements of Bipolar Devices Under High DC Current Density: Whether Transimpedance or Voltage Amplifiers 双极器件在高直流电流密度下的低频噪声测量:无论是跨阻还是电压放大器
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282764
A. de Souza, J. Nallatamby, M. Prigent
{"title":"Low-Frequency Noise Measurements of Bipolar Devices Under High DC Current Density: Whether Transimpedance or Voltage Amplifiers","authors":"A. de Souza, J. Nallatamby, M. Prigent","doi":"10.1109/EMICC.2006.282764","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282764","url":null,"abstract":"Different setups for the measurement of the low-frequency noise of semiconductor devices have been proposed in the literature, based on the use of either low-noise voltage amplifiers (VAs) or, more recently, transimpedance amplifiers (TAs). This paper aims to address the applicability and physical limit of each configuration, when they are applied to measure the LF noise of HBTs or diodes at moderate to high DC current densities. Extracted noise curves issued from different setups are analyzed. Noise data collected from recent low-noise technologies shows that physical limits are being systematically approached","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121157749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Detailed Analysis of DC-RF Dispersion in AlGaN/GaN HFETs using Waveform Measurements 使用波形测量详细分析AlGaN/GaN hfet中的DC-RF色散
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282745
C. Roff, P. McGovern, J. Benedikt, P. Tasker, R. Balmer, D. Wallis, K. Hilton, J. O. Maclean, D. Hayes, M. Uren, T. Martin
{"title":"Detailed Analysis of DC-RF Dispersion in AlGaN/GaN HFETs using Waveform Measurements","authors":"C. Roff, P. McGovern, J. Benedikt, P. Tasker, R. Balmer, D. Wallis, K. Hilton, J. O. Maclean, D. Hayes, M. Uren, T. Martin","doi":"10.1109/EMICC.2006.282745","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282745","url":null,"abstract":"Detailed time-domain IV waveforms at RF frequencies are employed for characterisation of AlGaN/GaN HFETs in order to steer and advance device development. The IV time-domain data is used to isolate the separate effects of pinch-off and knee-walkout behaviour in limiting device performance. Furthermore, the waveform measurements which are obtained with a previously unseen level of detail, allowed the direct extraction of optimum device operating conditions","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117051033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
220 GHz Low-Noise Amplifier Modules for Radiometric Imaging Applications 用于辐射成像应用的220 GHz低噪声放大器模块
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282770
A. Tessmann, A. Leuther, M. Kuri, H. Massler, M. Riessle, H. Essen, H. Stanko, R. Sommer, M. Zink, R. Stibal, W. Reinert, M. Schlechtweg
{"title":"220 GHz Low-Noise Amplifier Modules for Radiometric Imaging Applications","authors":"A. Tessmann, A. Leuther, M. Kuri, H. Massler, M. Riessle, H. Essen, H. Stanko, R. Sommer, M. Zink, R. Stibal, W. Reinert, M. Schlechtweg","doi":"10.1109/EMICC.2006.282770","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282770","url":null,"abstract":"G-band low-noise amplifier (LNA) modules have been successfully developed for use in high-resolution radiometric imaging applications. The WR-5 waveguide modules contain a four-stage 220 GHz cascode LNA MMIC and two microstrip-to-waveguide transitions which were realized on 50 mum thick quartz substrates. The monolithic amplifier circuits were fabricated using a well proven 0.1 mum InAlAs/InGaAs metamorphic high electron mobility transistor (MHEMT) technology in combination with grounded coplanar waveguides (GCPW). Furthermore, an MMIC based 220 GHz direct detection radiometer was developed, for the first time, containing three amplifier modules connected in series and demonstrating a small-signal gain of more than 50 dB over the frequency range from 209 to 217 GHz","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126526190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 56
Low-voltage, Low-power and High-gain Mixer Based on Unbalanced Mixer Cell 基于不平衡混频器单元的低压、低功耗、高增益混频器
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282665
Nogil Myoung, H. S. Kang, Seok Tae Kim, Byoung Gun Choi, Seong-Su Park, C. Park
{"title":"Low-voltage, Low-power and High-gain Mixer Based on Unbalanced Mixer Cell","authors":"Nogil Myoung, H. S. Kang, Seok Tae Kim, Byoung Gun Choi, Seong-Su Park, C. Park","doi":"10.1109/EMICC.2006.282665","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282665","url":null,"abstract":"A low-voltage, low-power and high-gain mixer core structure based on the unbalanced mixer cell or square-law mixer cell for 5GHz wireless LAN applications is presented in this paper. To reduce power dissipation, a new single-balanced mixer was proposed which operates under a low supply voltage and with the current reuse technique. The circuit was designed with a 0.18mum CMOS process. The designed down-conversion mixer has a maximum conversion gain of 22dB with LO power of -2.5dBm. However, with small LO power of -10dBm, -15dBm and -20dBm the mixer shows a moderate conversion gain of 14.9dB, 10dB and 5.1dB, and an input P1dB of -14dBm, -9.5dBm and -4.5dBm, and an input IP3 of -4.5dBm, 0dBm and 5dBm, respectively. The designed mixer including a bias circuit consumes 1.2mA under a 1.5V supply voltage. The chip size including pads is 0.77mm times 0.81mm","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126157709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
A High Performance 20-42 GHz MMIC Frequency Multiplier with Low Input Drive Power and High Output Power 低输入驱动功率和高输出功率的高性能20-42 GHz MMIC倍频器
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282701
S. Kumar, H. Morkner
{"title":"A High Performance 20-42 GHz MMIC Frequency Multiplier with Low Input Drive Power and High Output Power","authors":"S. Kumar, H. Morkner","doi":"10.1109/EMICC.2006.282701","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282701","url":null,"abstract":"A 20-42GHz output frequency GaAs MMIC frequency doubler chip has been developed that requires low input drive power and produces high output power with high fundamental & harmonic suppression without any external filter. This developed chip has an integrated broadband single ended-in to differential-out active Balun with impedance inverter and a broadband waveform shaping circuit. The unique topology of developed Balun helps to produce high voltage swing at differential outputs at low input drive power with excellent amplitude and phase balance over the band. The differential outputs of active Balun are connected to balanced common source FETs and drive the balanced FETs in push-push configuration to generate second harmonics and reject fundamental and higher (odd) order harmonics. This creates a broadband frequency doubler with overlapping input and output frequencies, high conversion efficiency with good fundamental and higher odd harmonic rejection without any external Filter. The doubler work from -9 to +7 dBm. The output power of doubler is +17 to +18dBm in most of the band at Pin=+3dBm. Fundamental suppression is better than 50dBc to 34GHz and minimum 30dBc in the entire band. 3rd and 4th harmonic rejections are also better than 25dBc in most of the band. The phase noise of doubler is -137dBc/Hz at 100 kHz offset (fout=24GHz). The input return loss of doubler is better than 20dB in most of the band and output return loss varies from 10-15dB over the band. It works at Vd =4.5V, Id=100-225mA","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125130380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
A Millimeter-Wave Highly Linear VCO MMIC with Compact Tuning Voltage Converter 具有紧凑型调谐电压变换器的毫米波高线性VCO MMIC
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282700
H. Mizutani, M. Tsuru, T. Matsuzuka, K. Choumei, K. Kawakami, M. Miyazaki
{"title":"A Millimeter-Wave Highly Linear VCO MMIC with Compact Tuning Voltage Converter","authors":"H. Mizutani, M. Tsuru, T. Matsuzuka, K. Choumei, K. Kawakami, M. Miyazaki","doi":"10.1109/EMICC.2006.282700","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282700","url":null,"abstract":"This paper presents a fully integrated highly linear and low phase noise voltage controlled oscillator (VCO) with a novel compact tuning voltage converter for millimeter-wave applications. The tuning voltage converter consists of only a few diodes and resistors and has nonlinear characteristics to correct varactor tuning curves. The authors fabricated the millimeter-wave VCO MMIC employing InGaP/GaAs HBT process. The MMIC chip size is 2.55 mm times 1.4 mm, in contrast the voltage converter has the size of 0.35 mm times 0.70 mm. The measured tuning sensitivity of 97 plusmn12 MHz/V is achieved for voltages between 0 V and 5 V, and the temperature dependency is very small. Also the phase noise performance is -110.7 dBc/Hz at 1MHz offset from the carrier when the oscillation frequency is 38.2 GHz. This linearization technique can greatly reduce the configuration of the conventional software linearization system","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131335775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
New drain current model for MESFET/HEMT devices based on pulsed measurements 基于脉冲测量的MESFET/HEMT器件漏极电流新模型
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282809
G. Rafael-Valdivia, R. Brady, T. Brazil
{"title":"New drain current model for MESFET/HEMT devices based on pulsed measurements","authors":"G. Rafael-Valdivia, R. Brady, T. Brazil","doi":"10.1109/EMICC.2006.282809","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282809","url":null,"abstract":"In this work, a new Ids current equation and FET model are proposed based on DC and pulsed I/V measurements. Its implementation is based on the identification of a new function that characterizes the differences between dynamic and static conditions. The performance of the model was evaluated with scattering, DC and pulsed measurements on different kinds of devices. The results show good agreement for low-high power transistors","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132636324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
PCS Power Amplifier Module Package Using Selectively Anodized Aluminum Substrate 采用选择性阳极氧化铝基板的PCS功率放大器模块封装
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282703
Seong-Ho Shin, Ju-Hyang Lee, Bo-In Sohn, Seung-Han Ryu, Young-Se Kwon
{"title":"PCS Power Amplifier Module Package Using Selectively Anodized Aluminum Substrate","authors":"Seong-Ho Shin, Ju-Hyang Lee, Bo-In Sohn, Seung-Han Ryu, Young-Se Kwon","doi":"10.1109/EMICC.2006.282703","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282703","url":null,"abstract":"In this paper, we present a power amplifier module package using a selectively anodized aluminum substrate for mobile handsets operating in the 1850 MHz to 1910 MHz PCS band. High-Q passive components (inductors, capacitors, transmission lines) for implementing the power amplifier are integrated on a 60 mum thick anodized aluminum layer and a bare InGaP HBT MMIC die is mounted on aluminum with the ability of effective heat dissipation. The fabricated module has a compact 3mm times 3mm size and exhibits 28.4 dB power gain, 41.5 % power added efficiency (PAE) and -36 dBc adjacent channel power ratio (ACPR) under a supply voltage of 3.7 V","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130914950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A novel high purity, highly efficient, broadband MMIC frequency multiplier implemented in metamorphic HEMT technology 一种基于变质HEMT技术的新型高纯度、高效率宽带MMIC倍频器
2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI: 10.1109/EMICC.2006.282805
A. Ådahl, H. Zirath
{"title":"A novel high purity, highly efficient, broadband MMIC frequency multiplier implemented in metamorphic HEMT technology","authors":"A. Ådahl, H. Zirath","doi":"10.1109/EMICC.2006.282805","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282805","url":null,"abstract":"A new principle of a high efficiency active frequency multiplier is presented. High efficiency is achieved by operating the transistor in deep Class C by using a source RC-bias-network, forcing the conduction angle to be substantially less than 180deg. The principle can also be extended to balanced frequency multipliers for higher rejection of the fundamental frequency. The 'proof of concept' is demonstrated in a practical MMIC design. This design achieves, to our knowledge, the highest reported efficiency for a balanced frequency doubler, with high bandwidth","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115452446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信