使用波形测量详细分析AlGaN/GaN hfet中的DC-RF色散

2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI:10.1109/EMICC.2006.282745

C. Roff, P. McGovern, J. Benedikt, P. Tasker, R. Balmer, D. Wallis, K. Hilton, J. O. Maclean, D. Hayes, M. Uren, T. Martin

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引用次数: 16

摘要

详细的时域IV波形在射频频率用于表征AlGaN/GaN hfet，以引导和推进器件的发展。IV时域数据用于隔离钳断和膝关节脱落行为在限制设备性能中的单独影响。此外，波形测量以以前未见过的细节水平获得，允许直接提取最佳设备操作条件

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Detailed Analysis of DC-RF Dispersion in AlGaN/GaN HFETs using Waveform Measurements

Detailed time-domain IV waveforms at RF frequencies are employed for characterisation of AlGaN/GaN HFETs in order to steer and advance device development. The IV time-domain data is used to isolate the separate effects of pinch-off and knee-walkout behaviour in limiting device performance. Furthermore, the waveform measurements which are obtained with a previously unseen level of detail, allowed the direct extraction of optimum device operating conditions

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2006 European Microwave Integrated Circuits Conference

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