基于脉冲测量的MESFET/HEMT器件漏极电流新模型

2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI:10.1109/EMICC.2006.282809

G. Rafael-Valdivia, R. Brady, T. Brazil

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引用次数: 5

摘要

在这项工作中，提出了一个新的基于直流和脉冲I/V测量的Ids电流方程和场效应管模型。它的实现是基于对动态和静态条件之间差异特征的新功能的识别。通过在不同器件上的散射、直流和脉冲测量，对模型的性能进行了评价。结果表明，在低功率、高功率晶体管中，计算结果具有良好的一致性

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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New drain current model for MESFET/HEMT devices based on pulsed measurements

In this work, a new Ids current equation and FET model are proposed based on DC and pulsed I/V measurements. Its implementation is based on the identification of a new function that characterizes the differences between dynamic and static conditions. The performance of the model was evaluated with scattering, DC and pulsed measurements on different kinds of devices. The results show good agreement for low-high power transistors

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2006 European Microwave Integrated Circuits Conference

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