{"title":"基于脉冲测量的MESFET/HEMT器件漏极电流新模型","authors":"G. Rafael-Valdivia, R. Brady, T. Brazil","doi":"10.1109/EMICC.2006.282809","DOIUrl":null,"url":null,"abstract":"In this work, a new Ids current equation and FET model are proposed based on DC and pulsed I/V measurements. Its implementation is based on the identification of a new function that characterizes the differences between dynamic and static conditions. The performance of the model was evaluated with scattering, DC and pulsed measurements on different kinds of devices. The results show good agreement for low-high power transistors","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"New drain current model for MESFET/HEMT devices based on pulsed measurements\",\"authors\":\"G. Rafael-Valdivia, R. Brady, T. Brazil\",\"doi\":\"10.1109/EMICC.2006.282809\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, a new Ids current equation and FET model are proposed based on DC and pulsed I/V measurements. Its implementation is based on the identification of a new function that characterizes the differences between dynamic and static conditions. The performance of the model was evaluated with scattering, DC and pulsed measurements on different kinds of devices. The results show good agreement for low-high power transistors\",\"PeriodicalId\":269652,\"journal\":{\"name\":\"2006 European Microwave Integrated Circuits Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 European Microwave Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMICC.2006.282809\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 European Microwave Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2006.282809","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
New drain current model for MESFET/HEMT devices based on pulsed measurements
In this work, a new Ids current equation and FET model are proposed based on DC and pulsed I/V measurements. Its implementation is based on the identification of a new function that characterizes the differences between dynamic and static conditions. The performance of the model was evaluated with scattering, DC and pulsed measurements on different kinds of devices. The results show good agreement for low-high power transistors