{"title":"采用选择性阳极氧化铝基板的PCS功率放大器模块封装","authors":"Seong-Ho Shin, Ju-Hyang Lee, Bo-In Sohn, Seung-Han Ryu, Young-Se Kwon","doi":"10.1109/EMICC.2006.282703","DOIUrl":null,"url":null,"abstract":"In this paper, we present a power amplifier module package using a selectively anodized aluminum substrate for mobile handsets operating in the 1850 MHz to 1910 MHz PCS band. High-Q passive components (inductors, capacitors, transmission lines) for implementing the power amplifier are integrated on a 60 mum thick anodized aluminum layer and a bare InGaP HBT MMIC die is mounted on aluminum with the ability of effective heat dissipation. The fabricated module has a compact 3mm times 3mm size and exhibits 28.4 dB power gain, 41.5 % power added efficiency (PAE) and -36 dBc adjacent channel power ratio (ACPR) under a supply voltage of 3.7 V","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"PCS Power Amplifier Module Package Using Selectively Anodized Aluminum Substrate\",\"authors\":\"Seong-Ho Shin, Ju-Hyang Lee, Bo-In Sohn, Seung-Han Ryu, Young-Se Kwon\",\"doi\":\"10.1109/EMICC.2006.282703\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we present a power amplifier module package using a selectively anodized aluminum substrate for mobile handsets operating in the 1850 MHz to 1910 MHz PCS band. High-Q passive components (inductors, capacitors, transmission lines) for implementing the power amplifier are integrated on a 60 mum thick anodized aluminum layer and a bare InGaP HBT MMIC die is mounted on aluminum with the ability of effective heat dissipation. The fabricated module has a compact 3mm times 3mm size and exhibits 28.4 dB power gain, 41.5 % power added efficiency (PAE) and -36 dBc adjacent channel power ratio (ACPR) under a supply voltage of 3.7 V\",\"PeriodicalId\":269652,\"journal\":{\"name\":\"2006 European Microwave Integrated Circuits Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 European Microwave Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMICC.2006.282703\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 European Microwave Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2006.282703","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
PCS Power Amplifier Module Package Using Selectively Anodized Aluminum Substrate
In this paper, we present a power amplifier module package using a selectively anodized aluminum substrate for mobile handsets operating in the 1850 MHz to 1910 MHz PCS band. High-Q passive components (inductors, capacitors, transmission lines) for implementing the power amplifier are integrated on a 60 mum thick anodized aluminum layer and a bare InGaP HBT MMIC die is mounted on aluminum with the ability of effective heat dissipation. The fabricated module has a compact 3mm times 3mm size and exhibits 28.4 dB power gain, 41.5 % power added efficiency (PAE) and -36 dBc adjacent channel power ratio (ACPR) under a supply voltage of 3.7 V
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