PCS Power Amplifier Module Package Using Selectively Anodized Aluminum Substrate

2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI:10.1109/EMICC.2006.282703

Seong-Ho Shin, Ju-Hyang Lee, Bo-In Sohn, Seung-Han Ryu, Young-Se Kwon

引用次数: 6

Abstract

In this paper, we present a power amplifier module package using a selectively anodized aluminum substrate for mobile handsets operating in the 1850 MHz to 1910 MHz PCS band. High-Q passive components (inductors, capacitors, transmission lines) for implementing the power amplifier are integrated on a 60 mum thick anodized aluminum layer and a bare InGaP HBT MMIC die is mounted on aluminum with the ability of effective heat dissipation. The fabricated module has a compact 3mm times 3mm size and exhibits 28.4 dB power gain, 41.5 % power added efficiency (PAE) and -36 dBc adjacent channel power ratio (ACPR) under a supply voltage of 3.7 V

查看原文本刊更多论文

采用选择性阳极氧化铝基板的PCS功率放大器模块封装

在本文中，我们提出了一种使用选择性阳极氧化铝基板的功率放大器模块封装，用于工作在1850 MHz至1910 MHz PCS频段的移动电话。用于实现功率放大器的高q无源元件(电感、电容器、传输线)集成在60 μ m厚的阳极氧化铝层上，并将一个裸InGaP HBT MMIC芯片安装在具有有效散热能力的铝上。该模块尺寸为3mm × 3mm，在3.7 V电源电压下，功率增益为28.4 dB，功率附加效率(PAE)为41.5%，相邻通道功率比(ACPR)为- 36dbc

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2006 European Microwave Integrated Circuits Conference

自引率

0.00%

发文量