高截距点,宽带,经济高效,功率高效的无源反射FET DBM

U. Rohde, A. Poddar
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引用次数: 3

摘要

报道了一种高截距点、宽带、高性价比和低功耗的被动反射场效应管双平衡混频器(DBM)。本文基于一种新颖的方法,该方法在整个频带(RF: 600-2500MHz, LO: 550-2300MHz, IF: 50-200MHz)中提供超过42dB的截距点(IP3)和小于9.5 dB的转换损耗,本端功率通常为17dBm。对于宽带应用,接口隔离优于30 dB,并且电路拓扑不限于这些频率,并且可以很容易地扩展到当前和下一代通信系统
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High Intercept Point, Broadband, Cost-Effective, and Power-Efficient Passive Reflection FET DBM
A high intercept points, broadband, cost-effective and power-efficient passive reflection FET double balanced mixer (DBM) is reported. This paper is based on novel approach that gives intercept points (IP3) in excess of 42dB in and conversion loss less than 9.5 dB with the LO power typically 17dBm throughout the frequency bands (RF: 600-2500MHz, LO: 550-2300MHz, IF: 50-200MHz). The interport isolation is better than 30 dB for broadband applications, and the circuit topology is not limited to these frequencies, and can be easily extended for present and later generation of communication systems
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