Sungwon Kim, Dong-Hwan Kim, Jin-churl Her, Kyung-Chul Jang, W. Choi, Y. Kwon, K. Seo
{"title":"采用120nm In0.4AlAs/In0.35GaAs变质HEMTs的77GHz低噪声亚块mmic","authors":"Sungwon Kim, Dong-Hwan Kim, Jin-churl Her, Kyung-Chul Jang, W. Choi, Y. Kwon, K. Seo","doi":"10.1109/EMICC.2006.282761","DOIUrl":null,"url":null,"abstract":"77 GHz CPW low noise sub block (LNB) MMICs, which are consisted of a 3 stage LNA and a resistive mixer, have been successfully developed by using 120nm In0.4AlAs/In0.35GaAs metamorphic high electron mobility transistors (MHEMTs). The devices show an extrinsic transconductance gm of 760 mS/mm, a maximum drain current of 750 mA/mm, and a gate drain breakdown voltage of -8.5 V. A cut-off frequency (fT) of 172 GHz and a maximum oscillation frequency (fmax) of over 300 GHz are achieved. The LNA exhibited small signal gain of 19.2 dB and conversion gain of the LNB is measured to be 11 dB at 500 kHz IF","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"77GHz Low Noise Sub Block MMICs with 120 nm In0.4AlAs/In0.35GaAs Metamorphic HEMTs\",\"authors\":\"Sungwon Kim, Dong-Hwan Kim, Jin-churl Her, Kyung-Chul Jang, W. Choi, Y. Kwon, K. Seo\",\"doi\":\"10.1109/EMICC.2006.282761\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"77 GHz CPW low noise sub block (LNB) MMICs, which are consisted of a 3 stage LNA and a resistive mixer, have been successfully developed by using 120nm In0.4AlAs/In0.35GaAs metamorphic high electron mobility transistors (MHEMTs). The devices show an extrinsic transconductance gm of 760 mS/mm, a maximum drain current of 750 mA/mm, and a gate drain breakdown voltage of -8.5 V. A cut-off frequency (fT) of 172 GHz and a maximum oscillation frequency (fmax) of over 300 GHz are achieved. The LNA exhibited small signal gain of 19.2 dB and conversion gain of the LNB is measured to be 11 dB at 500 kHz IF\",\"PeriodicalId\":269652,\"journal\":{\"name\":\"2006 European Microwave Integrated Circuits Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 European Microwave Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMICC.2006.282761\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 European Microwave Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2006.282761","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
77GHz Low Noise Sub Block MMICs with 120 nm In0.4AlAs/In0.35GaAs Metamorphic HEMTs
77 GHz CPW low noise sub block (LNB) MMICs, which are consisted of a 3 stage LNA and a resistive mixer, have been successfully developed by using 120nm In0.4AlAs/In0.35GaAs metamorphic high electron mobility transistors (MHEMTs). The devices show an extrinsic transconductance gm of 760 mS/mm, a maximum drain current of 750 mA/mm, and a gate drain breakdown voltage of -8.5 V. A cut-off frequency (fT) of 172 GHz and a maximum oscillation frequency (fmax) of over 300 GHz are achieved. The LNA exhibited small signal gain of 19.2 dB and conversion gain of the LNB is measured to be 11 dB at 500 kHz IF
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
