GaAs Power pHEMT Characterization for Extracting Nonlinear Parameters of Drain Current by Harmonic Measurement

Abstract

This paper presents a simple method to extract nonlinear parameters of GaAs pseudomorphic high electron mobility transistor (pHEMT) for Volterra-Series analysis. With measuring the harmonic powers and phase polarities at various attenuations, the nonlinear parameters could be solved in least-square sense to reduce the measured uncertainties. The extracted data are validated by the two-tone measurements for a wide-range bias sweep