低损耗微带表面贴装k波段封装

K. Entesari, Gabriel M. Rebeiz
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引用次数: 5

摘要

本文提出了一种用于k波段应用的微带结构的密封兼容表面贴装封装。微带线在250毫米厚的氧化铝衬底上制造,使用280毫米厚的硅帽晶圆和金-金热压缩键合封装。帽晶圆上蚀刻了一个130 μ m的腔,为RF MEMS器件、表面波或体波声滤波器、功率放大器或多芯片组件提供了充足的空间。通过孔过渡将封装内的微带线连接到氧化铝晶圆背面的共面波导(CPW)线。金密封环通过氧化铝晶圆通过过孔连接到微带接地,以消除任何寄生共振模式,并提高输入和输出端口之间的隔离。总尺寸为2.6 mm的封装微带线在DC-23 GHz下的插入损耗和回波损耗分别小于0.5 dB和18 dB
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Low-Loss Microstrip Surface-Mount K-Band Package
This paper presents a hermetic-compatible surface mount package for microstrip structures designed for K-band applications. The microstrip lines, fabricated on a 250 mum-thick alumina substrate are packaged using a 280 mum-thick silicon cap wafer and gold-gold thermo-compression bonding. A 130 mum cavity is etched in the cap wafer to allow ample space for RF MEMS devices, surface- or bulk-wave acoustic filters, power amplifiers, or multi-chip assemblies. A via-hole transition is used to connect the microstrip line inside the package to the coplanar waveguide (CPW) line on the back side of the alumina wafer. The gold sealing ring is connected to the microstrip ground using via-holes through the alumina wafer to eliminate any parasitic resonance modes and to improve the isolation between the input and output ports. A packaged microstrip line with total dimensions of 2.6 mm has a measured insertion loss and return loss of less than 0.5 dB and 18 dB, respectively, at DC-23 GHz
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