A. Matiss, W. Brockerhoff, A. Poloczek, W. Prost, F. Tegude
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Low-Temperature DC and RF Measurement and Modelling of InGaAs-InAlAs Resonant Tunneling Diodes down to 15 K
The influence of temperature on bias dependent small-signal equivalent circuit components of a resonant tunneling diode (RTD) is investigated from 290 K down to 15 K. The RTD model based on bias dependent parasitic elements and the quantum capacitance as well as the quantum conductance is fitted to both, on-wafer DC and RF S-parameter measurements from 45 MHz to 40 GHz over a bias range of 0 V to 0.80 V. For the full temperature range, good agreement between extracted and measured parameters is shown
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