利用谐波测量提取漏极电流非线性参数的GaAs功率pHEMT表征

2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI:10.1109/EMICC.2006.282674

Kuan-Yu Chen, Chien-Chang Huang

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引用次数: 1

摘要

本文提出了一种用于Volterra-Series分析的GaAs伪晶高电子迁移率晶体管(pHEMT)非线性参数提取方法。通过测量不同衰减下的谐波功率和相极性，可以对非线性参数进行最小二乘求解，减小了测量的不确定性。提取的数据通过双色调测量验证了宽范围偏置扫描

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GaAs Power pHEMT Characterization for Extracting Nonlinear Parameters of Drain Current by Harmonic Measurement

This paper presents a simple method to extract nonlinear parameters of GaAs pseudomorphic high electron mobility transistor (pHEMT) for Volterra-Series analysis. With measuring the harmonic powers and phase polarities at various attenuations, the nonlinear parameters could be solved in least-square sense to reduce the measured uncertainties. The extracted data are validated by the two-tone measurements for a wide-range bias sweep

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2006 European Microwave Integrated Circuits Conference

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