发布求助
文献互助 智能选刊 最新文献

[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics最新文献

筛选
英文 中文
Properties of sol gel processed PLZT (2/54/46) films on indium tin oxide 溶胶-凝胶处理氧化铟锡PLZT(2/54/46)薄膜的性能
[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics Pub Date : 1990-06-06 DOI: 10.1109/ISAF.1990.200345
Z. Wu, M. Sayer
{"title":"Properties of sol gel processed PLZT (2/54/46) films on indium tin oxide","authors":"Z. Wu, M. Sayer","doi":"10.1109/ISAF.1990.200345","DOIUrl":"https://doi.org/10.1109/ISAF.1990.200345","url":null,"abstract":"Lanthanum doped lead zirconate titanate (PLZT) films have been deposited by a sol gel technique on indium tin oxide (ITO) coated glass substrates. Evolution of the crystallographic structure, dielectric behavior, and ferroelectric properties has been studied as a function of film thickness (0.3 to 0.8 mu m), annealed over a range of temperatures (500 to 650 degrees C). Results have indicated the existence of a nonferroelectric layer in the PLZT-ITO interface.<<ETX>>","PeriodicalId":269368,"journal":{"name":"[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124397981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Four layer Y-branch coupled mode analysis 四层y支路耦合模式分析
[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics Pub Date : 1990-06-06 DOI: 10.1109/ISAF.1990.200282
Shaur-Chian Wu, Wei-Yu Lee, Shug-June Hwang, Wei-Ching Chwang
{"title":"Four layer Y-branch coupled mode analysis","authors":"Shaur-Chian Wu, Wei-Yu Lee, Shug-June Hwang, Wei-Ching Chwang","doi":"10.1109/ISAF.1990.200282","DOIUrl":"https://doi.org/10.1109/ISAF.1990.200282","url":null,"abstract":"The characteristics of a branching waveguide composed of a four-layer structure are analyzed. Conventionally, a lightwave guiding structure is composed of three layers with the center region having a higher refractive index than the other regions. Thus, a lightwave can be confined in the center region for propagation. However, there exists another structure which has an extra region, and this structure is called a four-layer waveguide. This geometry has two layers of higher refractive index, and both layers or one layer only can be used for guiding waves. This structure has the advantage of desensitivity in temperature and pressure with the extra variables of waveguide width and refractive index. Propagation in this structure is discussed.<<ETX>>","PeriodicalId":269368,"journal":{"name":"[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125107284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of lead-based MLC by alternative lamination of 2 kinds of thin sheets with different compositions 两种不同成分的薄片交替层合制备铅基MLC
[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics Pub Date : 1990-06-06 DOI: 10.1109/ISAF.1990.200275
S. Tashiro, Y. Mizukami, H. Igarashi
{"title":"Fabrication of lead-based MLC by alternative lamination of 2 kinds of thin sheets with different compositions","authors":"S. Tashiro, Y. Mizukami, H. Igarashi","doi":"10.1109/ISAF.1990.200275","DOIUrl":"https://doi.org/10.1109/ISAF.1990.200275","url":null,"abstract":"The authors describe a novel type of composite structure for a multilayer ceramic capacitor (MLC) with a broad temperature dependence of capacitance. The composites were composed of two kinds of dielectric layers stacked alternately, and both dielectric layers, L-layer and the H-layer were composed of lead-based relaxor materials with different Curie points of -35 degrees C (L-layer) and 120 degrees C (H-layer). The dielectric properties and microstructure of the composite MLC are discussed, focusing on shrinkage of the dielectric layer and diffusion between the L- and H-layers in the firing process.<<ETX>>","PeriodicalId":269368,"journal":{"name":"[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126171860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Studies on dielectric and mechanical properties of PZT doped ceramics, using a model of losses 利用损耗模型研究PZT掺杂陶瓷的介电性能和力学性能
[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics Pub Date : 1990-06-06 DOI: 10.1109/ISAF.1990.200319
R. Briot, P. Gonnard, M. Troccaz
{"title":"Studies on dielectric and mechanical properties of PZT doped ceramics, using a model of losses","authors":"R. Briot, P. Gonnard, M. Troccaz","doi":"10.1109/ISAF.1990.200319","DOIUrl":"https://doi.org/10.1109/ISAF.1990.200319","url":null,"abstract":"A suitable manganese addition in lead zirconate titanate lowers losses of piezoceramics. An attempt is made to show how an equivalent electrical circuit taking into account the grain boundary and domain wall effects permits an analysis of the role of manganese addition on dielectric and mechanical losses in lead zirconate titanate (PZT) ceramics. From an analysis of the experimental frequency dependence of both conductance and admittance, the parameters of the equivalent circuit are calculated. Computer simulations allowed identification of bulk, domain wall, and boundary layer effects and their frequency dependence.<<ETX>>","PeriodicalId":269368,"journal":{"name":"[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics","volume":"170 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123553383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A comparison of some ferroelectric and piezoelectric films for SAW devices on silicon 硅表面声SAW器件用铁电薄膜与压电薄膜的比较
[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics Pub Date : 1990-06-06 DOI: 10.1109/ISAF.1990.200217
A. Mansingh, R. Srivastava, S. Jain
{"title":"A comparison of some ferroelectric and piezoelectric films for SAW devices on silicon","authors":"A. Mansingh, R. Srivastava, S. Jain","doi":"10.1109/ISAF.1990.200217","DOIUrl":"https://doi.org/10.1109/ISAF.1990.200217","url":null,"abstract":"A comparative study of a few ferroelectric and piezoelectric films for surface acoustic wave devices on a Si substrate is reported. Theoretical dispersion curves of phase velocity and coupling coefficient as a function of normalized thickness have been calculated for a film-Si structure with an interdigital transducer at the top of film. The material parameters for bulk crystals/ceramics have been used for calculation of the phase velocity and coupling coefficient. To make use of the large coupling coefficients of ferroelectric films on Si, comparatively thick films are required. The material parameters in the thin films are different from the bulk materials. The problem in estimating these constants for films is considered by comparing the theoretical and experimentally reported SAW data of ZnO films.<<ETX>>","PeriodicalId":269368,"journal":{"name":"[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122712849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical properties of co-fired high and low dielectric constant multilayer package materials 高、低介电常数共烧多层封装材料的电学性能
[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics Pub Date : 1990-06-06 DOI: 10.1109/ISAF.1990.200194
M. Megherhi, J. Dougherty, G. Dayton, R. Newnham
{"title":"Electrical properties of co-fired high and low dielectric constant multilayer package materials","authors":"M. Megherhi, J. Dougherty, G. Dayton, R. Newnham","doi":"10.1109/ISAF.1990.200194","DOIUrl":"https://doi.org/10.1109/ISAF.1990.200194","url":null,"abstract":"The problems encountered in mixing high-dielectric-constant (high-K) lead-oxide-based capacitor layers in the same body as low-dielectric-permittivity (low-K) signal distribution layers were studied. Compatibility between the high-K capacitor material and low-fire (850-950 degrees C) glass-Al/sub 2/O/sub 3/ substrates was investigated. Most high-K ceramic materials sinter at temperatures above 1000 degrees C; firing at 900 degrees C or lower can result in a porous structure with poor electrical properties.<<ETX>>","PeriodicalId":269368,"journal":{"name":"[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130675895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Pyroelectric activity in Langmuir-Blodgett multilayer assemblies Langmuir-Blodgett多层组件的热释电活性
[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics Pub Date : 1990-06-06 DOI: 10.1109/ISAF.1990.200182
R. Colbrook, G. Roberts
{"title":"Pyroelectric activity in Langmuir-Blodgett multilayer assemblies","authors":"R. Colbrook, G. Roberts","doi":"10.1109/ISAF.1990.200182","DOIUrl":"https://doi.org/10.1109/ISAF.1990.200182","url":null,"abstract":"The pyroelectric effect in Langmuir-Blodgett (LB) alternate layer films of 22-tricosenoic acid and 1-docosylamine and films of an organo-ruthenium complex (ruthenium ( eta /sup 5/-cyclopentadienyl)-(b triphenylphosphine) 4-heptadecoxybenzonitrile hexafluoro-phosphate) is reported. Methods of increasing the pyroelectric response and thermal stability of the films are discussed. Values of the quasi-static pyroelectric coefficient as high as 17 mu Cm/sup -2/ K/sup -1/ have been achieved. The figures of merit of these films incorporated in a room-temperature thermal imaging device are presented, one of which is in excess of those for VDF/TrFE copolymer films.<<ETX>>","PeriodicalId":269368,"journal":{"name":"[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123921704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optical characterization of lithium niobate thin films 铌酸锂薄膜的光学特性
[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics Pub Date : 1990-06-06 DOI: 10.1109/ISAF.1990.200359
C.H.-J. Huang, H. Chui, B. Stone, T. A. Rost, T. Rabson
{"title":"Optical characterization of lithium niobate thin films","authors":"C.H.-J. Huang, H. Chui, B. Stone, T. A. Rost, T. Rabson","doi":"10.1109/ISAF.1990.200359","DOIUrl":"https://doi.org/10.1109/ISAF.1990.200359","url":null,"abstract":"Optical waveguiding thin films of lithium niobate were RF sputtered onto single-crystal sapphire substrates. A polarized He-Ne laser light with a wavelength of 6328 AA was successfully fed into the optical waveguide by a rutile prism coupler. The guided modes excited by the prism coupler were observed and used to examine the optical properties of the waveguide. The effective thickness and the refractive index for transverse electric and transverse magnetic modes were calculated. The birefringence observed in the films and X-ray diffraction studies have confirmed the polycrystalline nature of the films. The attenuation of the light propagation in the waveguide was determined to be 1.2+or-0.1 dB/cm.<<ETX>>","PeriodicalId":269368,"journal":{"name":"[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121287049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Ferroelectric thin-film connections in integrated circuit neural networks 集成电路神经网络中的铁电薄膜连接
[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics Pub Date : 1990-06-06 DOI: 10.1109/ISAF.1990.200360
L. Clark, S. Dey, R. Grondin
{"title":"Ferroelectric thin-film connections in integrated circuit neural networks","authors":"L. Clark, S. Dey, R. Grondin","doi":"10.1109/ISAF.1990.200360","DOIUrl":"https://doi.org/10.1109/ISAF.1990.200360","url":null,"abstract":"The application of ferroelectric thin-film capacitors as connection element synapses in artificial neural network integrated circuits is described. A continuous-valued synapse (analog memory) where the synaptic efficacy is controlled by the polarization of a ferroelectric capacitor element is then described. This analog synapse utilized a non-destructive readout and required very infrequent refresh. A ferroelectric capacitor circuit model added to the SPICE circuit simulation program is discussed.<<ETX>>","PeriodicalId":269368,"journal":{"name":"[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121646217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
LaAlO/sub 3/ single crystal for substrate of high temperature superconducting thin films 高温超导薄膜衬底用LaAlO/sub - 3/单晶
[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics Pub Date : 1990-06-06 DOI: 10.1109/ISAF.1990.200290
Cong-zhou Li, Wen-huang Yang, D. Hou, Hui Fan, Hui-Yun Zhang
{"title":"LaAlO/sub 3/ single crystal for substrate of high temperature superconducting thin films","authors":"Cong-zhou Li, Wen-huang Yang, D. Hou, Hui Fan, Hui-Yun Zhang","doi":"10.1109/ISAF.1990.200290","DOIUrl":"https://doi.org/10.1109/ISAF.1990.200290","url":null,"abstract":"A perovskite-like LaAlO/sub 3/ single crystal was grown by the Czochralski technique. It was used as a substrate for yttrium barium copper oxide (YBaCuO) superconducting films. The best results were obtained using the","PeriodicalId":269368,"journal":{"name":"[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115808438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信