{"title":"集成电路神经网络中的铁电薄膜连接","authors":"L. Clark, S. Dey, R. Grondin","doi":"10.1109/ISAF.1990.200360","DOIUrl":null,"url":null,"abstract":"The application of ferroelectric thin-film capacitors as connection element synapses in artificial neural network integrated circuits is described. A continuous-valued synapse (analog memory) where the synaptic efficacy is controlled by the polarization of a ferroelectric capacitor element is then described. This analog synapse utilized a non-destructive readout and required very infrequent refresh. A ferroelectric capacitor circuit model added to the SPICE circuit simulation program is discussed.<<ETX>>","PeriodicalId":269368,"journal":{"name":"[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ferroelectric thin-film connections in integrated circuit neural networks\",\"authors\":\"L. Clark, S. Dey, R. Grondin\",\"doi\":\"10.1109/ISAF.1990.200360\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The application of ferroelectric thin-film capacitors as connection element synapses in artificial neural network integrated circuits is described. A continuous-valued synapse (analog memory) where the synaptic efficacy is controlled by the polarization of a ferroelectric capacitor element is then described. This analog synapse utilized a non-destructive readout and required very infrequent refresh. A ferroelectric capacitor circuit model added to the SPICE circuit simulation program is discussed.<<ETX>>\",\"PeriodicalId\":269368,\"journal\":{\"name\":\"[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.1990.200360\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.1990.200360","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ferroelectric thin-film connections in integrated circuit neural networks
The application of ferroelectric thin-film capacitors as connection element synapses in artificial neural network integrated circuits is described. A continuous-valued synapse (analog memory) where the synaptic efficacy is controlled by the polarization of a ferroelectric capacitor element is then described. This analog synapse utilized a non-destructive readout and required very infrequent refresh. A ferroelectric capacitor circuit model added to the SPICE circuit simulation program is discussed.<>