溶胶-凝胶处理氧化铟锡PLZT(2/54/46)薄膜的性能

[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics Pub Date : 1990-06-06 DOI:10.1109/ISAF.1990.200345

Z. Wu, M. Sayer

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引用次数: 1

摘要

采用溶胶-凝胶技术在氧化铟锡(ITO)镀膜玻璃衬底上制备了掺杂镧锆钛酸铅(PLZT)薄膜。研究了薄膜厚度(0.3 ~ 0.8 μ m)、退火温度(500 ~ 650℃)对晶体结构、介电性能和铁电性能的影响。结果表明，在PLZT-ITO界面中存在非铁电层。

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Properties of sol gel processed PLZT (2/54/46) films on indium tin oxide

Lanthanum doped lead zirconate titanate (PLZT) films have been deposited by a sol gel technique on indium tin oxide (ITO) coated glass substrates. Evolution of the crystallographic structure, dielectric behavior, and ferroelectric properties has been studied as a function of film thickness (0.3 to 0.8 mu m), annealed over a range of temperatures (500 to 650 degrees C). Results have indicated the existence of a nonferroelectric layer in the PLZT-ITO interface.<>

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[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics

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