Ferroelectric thin-film connections in integrated circuit neural networks

Abstract

The application of ferroelectric thin-film capacitors as connection element synapses in artificial neural network integrated circuits is described. A continuous-valued synapse (analog memory) where the synaptic efficacy is controlled by the polarization of a ferroelectric capacitor element is then described. This analog synapse utilized a non-destructive readout and required very infrequent refresh. A ferroelectric capacitor circuit model added to the SPICE circuit simulation program is discussed.<>