{"title":"Properties of sol gel processed PLZT (2/54/46) films on indium tin oxide","authors":"Z. Wu, M. Sayer","doi":"10.1109/ISAF.1990.200345","DOIUrl":null,"url":null,"abstract":"Lanthanum doped lead zirconate titanate (PLZT) films have been deposited by a sol gel technique on indium tin oxide (ITO) coated glass substrates. Evolution of the crystallographic structure, dielectric behavior, and ferroelectric properties has been studied as a function of film thickness (0.3 to 0.8 mu m), annealed over a range of temperatures (500 to 650 degrees C). Results have indicated the existence of a nonferroelectric layer in the PLZT-ITO interface.<<ETX>>","PeriodicalId":269368,"journal":{"name":"[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.1990.200345","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Lanthanum doped lead zirconate titanate (PLZT) films have been deposited by a sol gel technique on indium tin oxide (ITO) coated glass substrates. Evolution of the crystallographic structure, dielectric behavior, and ferroelectric properties has been studied as a function of film thickness (0.3 to 0.8 mu m), annealed over a range of temperatures (500 to 650 degrees C). Results have indicated the existence of a nonferroelectric layer in the PLZT-ITO interface.<>