高、低介电常数共烧多层封装材料的电学性能

[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics Pub Date : 1990-06-06 DOI:10.1109/ISAF.1990.200194

M. Megherhi, J. Dougherty, G. Dayton, R. Newnham

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引用次数: 1

摘要

研究了高介电常数(high-K)铅基电容器层与低介电常数(low-K)信号分布层在同一体内混合时遇到的问题。研究了高k电容材料与低温(850 ~ 950℃)玻璃- al /sub 2/O/sub 3/衬底的相容性。大多数高钾陶瓷材料在1000摄氏度以上的温度下烧结;在900摄氏度或更低的温度下烧制会导致电性能差的多孔结构。

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Electrical properties of co-fired high and low dielectric constant multilayer package materials

The problems encountered in mixing high-dielectric-constant (high-K) lead-oxide-based capacitor layers in the same body as low-dielectric-permittivity (low-K) signal distribution layers were studied. Compatibility between the high-K capacitor material and low-fire (850-950 degrees C) glass-Al/sub 2/O/sub 3/ substrates was investigated. Most high-K ceramic materials sinter at temperatures above 1000 degrees C; firing at 900 degrees C or lower can result in a porous structure with poor electrical properties.<>

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[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics

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