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2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)最新文献

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Investigation of transient radiation effects in GaAs field effect transistors under pulse ionization 脉冲电离下砷化镓场效应晶体管瞬态辐射效应的研究
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745656
I. O. Metelkin, V. Elesin, A. Kuznetsov, N. Usachev
{"title":"Investigation of transient radiation effects in GaAs field effect transistors under pulse ionization","authors":"I. O. Metelkin, V. Elesin, A. Kuznetsov, N. Usachev","doi":"10.1109/radecs47380.2019.9745656","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745656","url":null,"abstract":"Measurements and numerical simulation results of GaAs MESFET and PHEMT response to transient irradiation for wide range of ionization levels and bias conditions are presented. It was shown that specific bias conditions and ionization levels can be found for detail separate investigation of channel current change and bipolar-like amplification effects. Simple Shockley FET model was found to be applicable to analyze channel current change due to photovoltage occurrence at channel-buffer junction.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121128434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Pulsed X-ray irradiation response in the linear voltage regulator LM7805: before and after TID accumulation 线性稳压器LM7805中的脉冲x射线辐照响应:TID积累前后
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745665
Ruibin Li, Chaohui He, Chenhui Wang, Wei Chen, Junlin Li, Xiaoming Jin, Chao Qi, Xiaoyan Bai, Yan Liu, Guizhen Wang
{"title":"Pulsed X-ray irradiation response in the linear voltage regulator LM7805: before and after TID accumulation","authors":"Ruibin Li, Chaohui He, Chenhui Wang, Wei Chen, Junlin Li, Xiaoming Jin, Chao Qi, Xiaoyan Bai, Yan Liu, Guizhen Wang","doi":"10.1109/radecs47380.2019.9745665","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745665","url":null,"abstract":"Linear voltage regulators LM7805 are firstly irradiated in a Co-60 unit and subsequently irradiated in a pulsed X-ray radiation environment. The differences of the pulsed-irradiation response before and after total ionizing dose (TID) accumulation are observed and analyzed. The results indicate that the recovery time of the output voltage in the devices accumulating TID is longer than in those pristine ones. The TID effect and pulsed-irradiation response are discussed based on the circuitry of LM7805, and the influence of TID on the pulsed-irradiation response is analyzed via the analysis of the current gain of the integrated bipolar junction transistors (BJTs). The susceptive path for the TID affecting the pulsed-irradiation response in the device is figured out. Finally, simulation is carried out, and the results conform to the experimental results.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121266575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
RADECS 2019 Conference Committee RADECS 2019会议委员会
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745702
{"title":"RADECS 2019 Conference Committee","authors":"","doi":"10.1109/radecs47380.2019.9745702","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745702","url":null,"abstract":"","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126174087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Extreme Value Based Estimation of Critical Single Event Failure Probability 基于极值的临界单事件失效概率估计
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745677
G. Zebrev, A. M. Galimov, R. G. Useinov, I. Fateev
{"title":"Extreme Value Based Estimation of Critical Single Event Failure Probability","authors":"G. Zebrev, A. M. Galimov, R. G. Useinov, I. Fateev","doi":"10.1109/radecs47380.2019.9745677","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745677","url":null,"abstract":"A new survival probability function of ICs under space ion impact is proposed. Unlike the conventional approach, the function is based on the extreme value statistics which is relevant to the critical single event effects.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129496240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Total Dose and Single-Event Effects Test Results of the Intersil ISL7×814SEH High Current Driver Intersil的总剂量和单事件效应试验结果ISL7×814SEH大电流驱动器
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745726
W. H. Newman, N. V. van Vonno, A. Robinson, S. D. Turner, L. Pearce, E. Thomson
{"title":"Total Dose and Single-Event Effects Test Results of the Intersil ISL7×814SEH High Current Driver","authors":"W. H. Newman, N. V. van Vonno, A. Robinson, S. D. Turner, L. Pearce, E. Thomson","doi":"10.1109/radecs47380.2019.9745726","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745726","url":null,"abstract":"We report the results of total ionizing dose (TID) and destructive and nondestructive single-event effects (SEE) testing of the Intersil ISL72814SEH and ISL73814SEH radiation hardened, high-voltage, high-current, driver circuits.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129929137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Radiation-induced point- and cluster-related defects in epitaxial p-type silicon diodes 外延p型硅二极管中辐射诱导的点和团簇相关缺陷
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745686
Y. Gurimskaya, I. M. Suau, M. Moll, E. Fretwurst, L. Makarenko, I. Pintilie, J. Schwandt
{"title":"Radiation-induced point- and cluster-related defects in epitaxial p-type silicon diodes","authors":"Y. Gurimskaya, I. M. Suau, M. Moll, E. Fretwurst, L. Makarenko, I. Pintilie, J. Schwandt","doi":"10.1109/radecs47380.2019.9745686","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745686","url":null,"abstract":"A consistent quantitative description of radiation-induced degradation on p-type Silicon detectors is conducted within CERN RD50 collaboration. The present contribution summarizes the first obtained results for epitaxial 50 µm thin pad diodes irradiated with protons, neutrons and gamma rays. Microscopic and Macroscopic damage-driven effects are analyzed.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124990113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The RADECS 2019 Short Course RADECS 2019短期课程
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745660
{"title":"The RADECS 2019 Short Course","authors":"","doi":"10.1109/radecs47380.2019.9745660","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745660","url":null,"abstract":"This short course is intended for beginners as well as experts in the field. Basic and main concepts will be presented before focusing on various effects and technologies that are, and will be in the next decade, at play. It will cover displacement damage and ionizing dose effects for both silicon devices and emerging technologies. The issue of low energy protons for single event effects will be also addressed for space and high altitude environments. In addition, a talk on the complex challenges of mitigation techniques in FPGAs will be given. Finally, RHA strategies for aerospace systems will be presented.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114814857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Standard Verification Flow Compatible Layout-Aware Fault Injection Technique for Single Event Effects Tolerant ASIC Design 单事件影响容限ASIC设计的标准验证流程兼容布局感知故障注入技术
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745679
I. A. Danilov, A. I. Khazanova, A. Balbekov, M. Gorbunov
{"title":"Standard Verification Flow Compatible Layout-Aware Fault Injection Technique for Single Event Effects Tolerant ASIC Design","authors":"I. A. Danilov, A. I. Khazanova, A. Balbekov, M. Gorbunov","doi":"10.1109/radecs47380.2019.9745679","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745679","url":null,"abstract":"Ahstract- We propose a layout-aware fault injection technique for Single Event tolerant integrated circuits design. Being fully compatible with standard verification flow, the proposed technique is applied to AES crypto cores implemented with TMR.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126341774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Sensitive Region of Displacement Damage in LPNP Induced by Various Charged Particles 不同带电粒子诱导lnp位移损伤的敏感区
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745712
Xingji Li, Jianqun Yang, H. Barnaby, Pengwei Li, Xiang Sun, Lei Dong, K. Galloway, peixiong zhao, D. Fleetwood
{"title":"The Sensitive Region of Displacement Damage in LPNP Induced by Various Charged Particles","authors":"Xingji Li, Jianqun Yang, H. Barnaby, Pengwei Li, Xiang Sun, Lei Dong, K. Galloway, peixiong zhao, D. Fleetwood","doi":"10.1109/radecs47380.2019.9745712","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745712","url":null,"abstract":"In this paper, the sensitive region of displacement damage in LPNP induced by 10 MeV Si ions, 40 MeV Si ions and 3 MeV protons is investigated. Electrical parameters are measured in-situ using KEITHLEY 4200-SCS semiconductor characterization system during irradiation. The radiation-induced defects caused by various ions are characterized by deep level transient spectroscopy (DLTS). Experimental results show that with irradiation fluence of various particles increases, the excess base current increases and the ideality factor does not change and is close to 2. The change in the reciprocal of current gain of LPNP transistors caused by the three types of particles can be normalized in one line when Si/SiO2 interface rather than base region is considered as the sensitive region of the displacement damage. DLTS results show radiation defects in LPNP transistors caused by the three types of particles are main interface traps, determining that the Si/SiO2 interface becomes a radiation sensitive region of the LPNP devices.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132108931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Approach for Defining Internal Electrostatic Discharge Design Environment of a Jovian Mission 确定木星任务内部静电放电设计环境的方法
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745730
Wousik Kim, J. Chinn, I. Jun, H. Garrett
{"title":"Approach for Defining Internal Electrostatic Discharge Design Environment of a Jovian Mission","authors":"Wousik Kim, J. Chinn, I. Jun, H. Garrett","doi":"10.1109/radecs47380.2019.9745730","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745730","url":null,"abstract":"One of the most important tasks of the iESD assessment is to define the relevant environment. We show how the iESD design environments of the Juno mission and Europa Clipper mission have been determined.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"2012 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114585724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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