Radiation-induced point- and cluster-related defects in epitaxial p-type silicon diodes

Abstract

A consistent quantitative description of radiation-induced degradation on p-type Silicon detectors is conducted within CERN RD50 collaboration. The present contribution summarizes the first obtained results for epitaxial 50 µm thin pad diodes irradiated with protons, neutrons and gamma rays. Microscopic and Macroscopic damage-driven effects are analyzed.