2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)最新文献_第8页

TID Test Results of LVDS Driver and Receiver ICs with Extended Common Mode Capability 具有扩展共模能力的LVDS驱动和接收ic的TID测试结果

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745709

Y. Tcherniavskaya, V. Burkhay, A. Rocke, V. Shunkov, F. Gerfers

引用次数: 1

Combined effect of radiation and temperature: towards optical fibers suited to distributed sensing in extreme radiation environments 辐射和温度的综合效应:适合极端辐射环境下分布式传感的光纤

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745718

G. Mélin, A. Barnini, A. Morana, S. Girard, P. Guitton, R. Montron

引用次数: 1

An Improved Approach for Quantitative Pulsed-Laser Single-Event Effects Testing Using Two-Photon Absorption 一种改进的双光子吸收定量脉冲激光单事件效应测试方法

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745728

J. Hales, A. Khachatrian, J. Warner, S. Buchner, D. McMorrow

引用次数: 0

Comparative Analysis of Upset-Multiplicity Occurrences due to Flash X-rays and Pulsed Neutrons in Commercial SRAMs 商用sram中闪光x射线与脉冲中子扰动多重性的比较分析

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745727

Chao Qi, Wei Chen, Yugang Wang, Guizhen Wang, Ruibin Li, Xiaoyan Bai, Xiaoming Jin

{"title":"Comparative Analysis of Upset-Multiplicity Occurrences due to Flash X-rays and Pulsed Neutrons in Commercial SRAMs","authors":"Chao Qi, Wei Chen, Yugang Wang, Guizhen Wang, Ruibin Li, Xiaoyan Bai, Xiaoming Jin","doi":"10.1109/radecs47380.2019.9745727","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745727","url":null,"abstract":"In this paper we propose an approach to distinguish between upset bursts induced by flash X-rays and pulsed neutrons, by analyzing upset-multiplicity occurrences. Test results of ISSI 65 nm SRAMs on a flash X-ray machine and a pulsed reactor are presented. We adopted binomial distributions to fit the obtained upset-multiplicity data. The pulsed-neutron results exhibit precise and consistent accordance with the binomial distributions. In contrast, the flash X-ray data sharply diverge from the binomial distributions as the dose rate exceeds the upset threshold. However, the discrepancy reduces significantly after the bit-upset proportion saturates at higher dose rates. Interestingly, the binomial distributions fit well with the flash X-ray data at all dose rates if combinations of 2 or 3 different binomial distributions are applied. To explain the observed phenomena, the underlying mechanisms of dose rate upsets and neutron-induced single event upsets are further discussed. Above all, the presented approach of analyzing upset-multiplicity occurrences of upset bursts provides a novel and straightforward means to differentiate localized and global effects, and is especially useful for dose-rate-upset analysis when the correspondence between physical and logical addresses is unavailable.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121254176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Combined Effects of Tantalum Ion and Gamma Ray Irradiations on MOS Devices with Atomic Layer Deposited $mathrm{A}1_{2}mathrm{O}_{3}$ Gate Dielectrics 钽离子和伽马射线辐照对原子层沉积$ mathm {A}1_{2} mathm {O}_{3}$栅极电介质MOS器件的联合效应

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745651

Z. Zheng, Huiping Zhu, Xi Chen, Lei Wang, Bo Li, Jiantou Gao, Duoli Li, Jiajun Luo, Zhengsheng Han, Xinyue Liu, Jie Liu

引用次数: 0

A Direct Evidence of the Annealing Effect of Ionization Damage on Displacement Damage in NPN Transistors 电离损伤退火对NPN晶体管位移损伤影响的直接证据

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745696

Jianqun Yang, Gang Lv, Lei Dong, Pengfei Xu, Xingji Li

{"title":"A Direct Evidence of the Annealing Effect of Ionization Damage on Displacement Damage in NPN Transistors","authors":"Jianqun Yang, Gang Lv, Lei Dong, Pengfei Xu, Xingji Li","doi":"10.1109/radecs47380.2019.9745696","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745696","url":null,"abstract":"In this paper, based on the sequential irradiation of 40 MeV Si ions and Co-60 gamma ray, a direct evidence of the annealing effect of ionization damage on displacement damage in 2N2219 NPN bipolar junction transistors (BJTs) is investigated. Electrical parameters are measured using KEITHLEY 4200-SCS semiconductor characterization system during irradiation. The radiation induced defects are characterized by deep level transient spectroscopy (DLTS). The experimental results show that the degradation of current gain for the F2N2219 BJTs for the sum of the independent Co-60 gamma radiation and heavy ion irradiation is larger than that for the sequential irradiations, indicating the existence of significant synergistic effect. For lower fluence of 40 MeV Si ions, when the dose of Co-60 gamma ray is lower, the excess base current of the irradiated transistors by the sequential irradiation is less than one of the irradiated transistors by the independent 40 MeV Si ions. When fluence of 40 MeV Si ions is more than 6×l08/cm2, all the excess base current of the irradiated transistors by the sequential irradiation is less than one of the irradiated transistors by the independent 40 MeV Si ions. These results show that ionization damage on the transistors caused by the subsequent Co-60 gamma ray has an annealing effect on displacement damage caused by the 40 MeV Si ions. DLTS analyses show that the displacement defects especially in V2(-/0) centers caused by the 40 MeV Si ions are annealed due to the oxide charges induced by Co-60 gamma ray irradiations. Moreover, the fluence of the independent 40 MeV Si ions is the larger, the annealing effect of the displacement defects is the more obvious.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129239380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Total Ionizing Dose and Single-Events characterization of Xilinx 20nm Kintex UltraScale™ Xilinx 20nm Kintex UltraScale™的总电离剂量和单事件表征

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745695

P. Maillard, Jeff Barton, M. Hart, Yanran P. Chen, M. Voogel

引用次数: 3

Single Event Effects by atmospheric neutrons in commercial (COTS) normally-off GaN HEMT 大气中子对商业(COTS)正常关闭GaN HEMT的单事件影响

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745683

D. Wölk, S. Höffgen, Eike Paschkowski, M. Steffens, C. Cazzaniga, C. Frost

引用次数: 0

Radiation Tolerance of RHBD techniques on a SiGe BiCMOS 350 nm ASIC technology RHBD技术在SiGe BiCMOS 350 nm ASIC技术上的辐射耐受性

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745681

Si Chen, D. PRELE, F. Voisin, P. Laurent, A. Goldwurm

{"title":"Radiation Tolerance of RHBD techniques on a SiGe BiCMOS 350 nm ASIC technology","authors":"Si Chen, D. PRELE, F. Voisin, P. Laurent, A. Goldwurm","doi":"10.1109/radecs47380.2019.9745681","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745681","url":null,"abstract":"This work presents the radiation tolerance of a Warm Frond-End Electronics subsystem (WFEE), using Radiation Hardening By Design (RHBD) techniques based on a SiGe BiCMOS 350 nm ASIC technology. The subsystem is in the context of a developing X-Ray space observatory of ESA, named ATHENA, planned to operate in a halo orbit around the second Lagrangian point (L2 Sun - Earth) with 5-year lifetime at the end of the next decade. The WFEE is a mixed electronic system, including analog devices, such as low noise amplifier and current sources for amplifying and biasing cryogenic stages, and also integrating digital devices: serial decoders RS485/ I2C for configuring the current sources. Because of extreme radiation space environment, different RHBD techniques have been used to improve the radiation tolerance of the WFEE electronics. The tolerance against radiation effects TID and SEL have been assessed. The evolution of the main parameters of the amplifier (gain and noise) and of the current sources (output current and noise) with respect to different dose levels has also been measured. The measurements after irradiations show that the RHBD techniques are very effective for improving radiation hardening capabilities of electronic circuits based on this technology.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129100166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Towards a Characterization of Vulnerability of XCR4C ASIC on Heavy-Ion Induced Transient Events XCR4C ASIC对重离子诱导瞬态事件脆弱性的表征

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745654

Bo Li, B. Lu, Huo Jia, Yong Chen, Fengyuan Zhang, Zexin Su, Jantou Gao, Chunlin Wang, Wenxin Zhao, Hainan Liu

引用次数: 1