Combined Effects of Tantalum Ion and Gamma Ray Irradiations on MOS Devices with Atomic Layer Deposited $\mathrm{A}1_{2}\mathrm{O}_{3}$ Gate Dielectrics

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI:10.1109/radecs47380.2019.9745651

Z. Zheng, Huiping Zhu, Xi Chen, Lei Wang, Bo Li, Jiantou Gao, Duoli Li, Jiajun Luo, Zhengsheng Han, Xinyue Liu, Jie Liu

引用次数: 0

Abstract

MOS devices with $\mathrm{A}1_{2}\mathrm{O}_{3}$ dielectrics are irradiated sequentially using gamma rays and 1907 MeV tantalum ions, and the combined irradiation effects on the $\mathrm{A}1_{2}\mathrm{O}_{3}$ based MOS devices are investigated and the mechanism is analyzed.

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钽离子和伽马射线辐照对原子层沉积$\ mathm {A}1_{2}\ mathm {O}_{3}$栅极电介质MOS器件的联合效应

采用伽玛射线和1907 MeV钽离子对具有$\ maththrm {A}1_{2}\ maththrm {O}{3}$电介质的MOS器件进行了序次辐照，研究了复合辐照对$\ maththrm {A}1_{2}\ maththrm {O}{3}$基MOS器件的影响，并分析了辐照机理。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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