XCR4C ASIC对重离子诱导瞬态事件脆弱性的表征

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI:10.1109/radecs47380.2019.9745654

Bo Li, B. Lu, Huo Jia, Yong Chen, Fengyuan Zhang, Zexin Su, Jantou Gao, Chunlin Wang, Wenxin Zhao, Hainan Liu

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引用次数: 1

摘要

在$^{181}\mathbf{Ta}^{31+}}$离子辐照下，在x射线CCD的radhard四通道CDS ASIC (XCR4C)中观察到持续数十秒的瞬态，并将其归因于偏置电路中的互补反馈机制。

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Towards a Characterization of Vulnerability of XCR4C ASIC on Heavy-Ion Induced Transient Events

Transients with durations of dozens of seconds in a rad-hard four-channel CDS ASIC (XCR4C) for X-ray CCD were observed during $^{181}\mathbf{Ta}^{31+}$ ions irradiation and were attributed to the complementary feedback mechanism in the bias circuit.

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来源期刊

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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