Total Ionizing Dose and Single-Events characterization of Xilinx 20nm Kintex UltraScale™

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI:10.1109/radecs47380.2019.9745695

P. Maillard, Jeff Barton, M. Hart, Yanran P. Chen, M. Voogel

引用次数: 3

Abstract

This paper examines the total ionizing dose (TID), single event upset (SEU) and latchup (SEL) response of Xilinx 20nm Kintex UltraScale™ for space applications. The Single Event Mitigation IP tool SEU response is also evaluated.

查看原文本刊更多论文

Xilinx 20nm Kintex UltraScale™的总电离剂量和单事件表征

本文研究了用于空间应用的Xilinx 20nm Kintex UltraScale™的总电离剂量(TID)、单事件扰动(SEU)和闭锁(SEL)响应。还评估了单事件缓解IP工具SEU响应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

自引率

0.00%

发文量