大气中子对商业(COTS)正常关闭GaN HEMT的单事件影响

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI:10.1109/radecs47380.2019.9745683

D. Wölk, S. Höffgen, Eike Paschkowski, M. Steffens, C. Cazzaniga, C. Frost

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引用次数: 0

摘要

本文介绍了在ChipIR上对具有类大气中子谱的商用高功率常关gan器件进行SEE测试的结果。在不同的电压下测试了三种不同设计的gan - hemt和一种SiC-MOSFET，并确定了截面。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Single Event Effects by atmospheric neutrons in commercial (COTS) normally-off GaN HEMT

This abstract presents the results of SEE testing of commercial high power normally-off GaN-devices with an atmospheric-like neutron spectrum at ChipIR. Three different designs of GaN-HEMTs and one SiC-MOSFET were tested at different voltages and the cross sections were determined.

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来源期刊

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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