外延p型硅二极管中辐射诱导的点和团簇相关缺陷

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI:10.1109/radecs47380.2019.9745686

Y. Gurimskaya, I. M. Suau, M. Moll, E. Fretwurst, L. Makarenko, I. Pintilie, J. Schwandt

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引用次数: 0

摘要

在CERN RD50合作中，对p型硅探测器的辐射诱导降解进行了一致的定量描述。本文总结了用质子、中子和伽马射线辐照外延50µm薄衬垫二极管的初步结果。分析了微观和宏观损伤驱动效应。

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Radiation-induced point- and cluster-related defects in epitaxial p-type silicon diodes

A consistent quantitative description of radiation-induced degradation on p-type Silicon detectors is conducted within CERN RD50 collaboration. The present contribution summarizes the first obtained results for epitaxial 50 µm thin pad diodes irradiated with protons, neutrons and gamma rays. Microscopic and Macroscopic damage-driven effects are analyzed.

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来源期刊

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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