2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)最新文献

Mechanical characteristics of porous silicon membrane for filtration in artificial kidney 多孔硅膜在人工肾过滤中的力学特性

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920810

N. Burham, A. A. Hamzah, B. Y. Majlis

引用次数: 6

An efficient ROM compression technique for linear- interpolated direct digital frequency synthesizer 线性插值直接数字频率合成器中一种有效的ROM压缩技术

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920826

Qahtan Khalaf Omran, M. Islam, N. Misran, M. Faruque

引用次数: 4

Dye-sensitized solar cell using aligned ZnO nanorod grown on SZO films at different solution molarities 在SZO薄膜上生长不同溶液摩尔浓度的排列ZnO纳米棒染料敏化太阳能电池

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920898

I. Saurdi, A. Shafura, M. H. Mamat, M. Rusop

{"title":"Dye-sensitized solar cell using aligned ZnO nanorod grown on SZO films at different solution molarities","authors":"I. Saurdi, A. Shafura, M. H. Mamat, M. Rusop","doi":"10.1109/SMELEC.2014.6920898","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920898","url":null,"abstract":"In this work, the aligned ZnO Nanorod were grown on ITO-coated glass substrates with Sn-doped ZnO films as a seed layer at different zinc acetate solution molarities of 0.05M, 0.04M, 0.03M and 0.02M by Sol gel immersion ultrasonic assisted. The aligned ZnO nanorods grown at different solution molarities had different of diameter and interspaces between nanorod. The ZnO nanorod grown at 0.03M Zinc acetate exhibits high surface area, whereby bigger interspaces between nanorod and had smaller of nanorod diameter. The nanorod grown at 0.05M had bigger of nanorod diameter and slightly lower of surface area as compared to nanorod grown at 0.03M. Meanwhile, the nanorod grown at 0.02M shows a scattered of nanorod growth with low surface area and lesser density. From the solar simulator measurement the solar energy conversion efficiency (η) of 0.989% under AM 1.5 was obtained for 0.03M aligned ZnO nanorod photoanode DSSC, which higher than other ZnO nanorod photoanode. The improvement which was due to higher surface area of smaller diameter nanorod that had bigger interspaces between nanorod for better dye absorption.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"7 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128377094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Memristive behavior of HF-etched sputtered titania thin films 高频蚀刻溅射二氧化钛薄膜的记忆行为

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920837

Z. Aznilinda, M. Ramly, N. Kamarozaman, S. H. Herman

引用次数: 0

Impact of different ground planes of UTBB SOI MOSFETs under the single-gate (SG) and double-gate (DG) operation mode 单栅极和双栅极工作模式下UTBB SOI mosfet不同接平面的影响

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920802

N. Othman, M. Arshad, S. Hashim

引用次数: 7

Controlling growth rate of ultra-thin Silicon Dioxide layer by incorporating nitrogen gas during dry thermal oxidation 在干热氧化过程中加入氮气控制超薄二氧化硅层的生长速率

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920880

A. H. Azman, R. Ayub, M. Arshad, S. Norhafiezah, M. Fathil, M. Z. Kamarudin, M. Nurfaiz, U. Hashim

引用次数: 3

Process development of 40 nm silicon nanogap for sensor application 传感器用40纳米硅纳米隙的工艺开发

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920804

M. S. N. Humaira, Uda Hashim, T. Nazwa, S. T. Ten, Shahab Ahmad, Nor Azah Yusof

{"title":"Process development of 40 nm silicon nanogap for sensor application","authors":"M. S. N. Humaira, Uda Hashim, T. Nazwa, S. T. Ten, Shahab Ahmad, Nor Azah Yusof","doi":"10.1109/SMELEC.2014.6920804","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920804","url":null,"abstract":"A recent breakthrough in nanotechnology provides a great extent in sensor fabrication and application. The technology has emerged as a powerful technique to minimize the size of devices; amount of materials, energy and time consumption. Nanogap based sensor is one of the sensor that capable of characterizing and quantifying molecules selectively and sensitively with good electrical behavior. In this manuscript, we present a collaboration work between UniMAP, MARDI and UPM in the process development of 40 nm silicon nanogap for sensor application. The process consists of a combination of electron beam lithography (EBL) method and conventional photolithography method. Both methods were for nanogap and electrodes pattern respectively. Silicon on insulator (SOI) substrate was used to fabricate the nanogap structure and gold was used for the electrode. The ability of EBL system to fabricate a gap in nanometer scale with direct lithography technique on SOI substrate gives advantages in this development work. The developed silicon nanogap device was physically characterized with scanning electron microscope (SEM). The sensor application was accomplished by testing the device with different level of pH solutions using a dielectric analyzer.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114835112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Atomic force microscope base nanolithography for reproducible micro and nanofabrication 原子力显微镜基纳米光刻技术用于可重复的微纳米加工

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920884

A. Dehzangi, F. Larki, B. Majlis, Zainab Kazemi, M. Ariannejad, N. Khalilzadeh

引用次数: 0

Effects of the fin width variation on the performance of 16 nm FinFETs with round fin corners and tapered fin shape 翅片宽度变化对圆角锥形16 nm finfet性能的影响

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920916

S. Hatta, N. Soin, S. H. Abdul Rahman, Y. A. Wahab, H. Hussin

引用次数: 15

Fabrication and characterization of polysilicon for DNA detection DNA检测用多晶硅的制备与表征

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920883

Y. Ang, M. Arshad, K. L. Foo, Md N. M. Nuzaihan, A. H. Azman, U. Hashim

引用次数: 1