2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)最新文献_第2页

Effects of ethanol in oxalic acid on the synthesis of porous anodic alumina 草酸中乙醇对多孔阳极氧化铝合成的影响

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920885

N. M. Saleh, B. Y. Lim, C. Voon, S. T. Ten, M. Derman, K. L. Foo, M. Arshad, U. Hashim

{"title":"Effects of ethanol in oxalic acid on the synthesis of porous anodic alumina","authors":"N. M. Saleh, B. Y. Lim, C. Voon, S. T. Ten, M. Derman, K. L. Foo, M. Arshad, U. Hashim","doi":"10.1109/SMELEC.2014.6920885","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920885","url":null,"abstract":"Porous anodic alumina is a self-organizing porous material suitable as a template for obtaining nanostructured semiconductor materials. However, low temperature is generally used for the synthesis of porous anodic alumina. In this study, porous anodic alumina films were synthesized by a simple one-step anodizing technique at constant potential 40V using different volume percentage of ethanol in 0.5M oxalic acid at the temperatures of 25 °C. The current versus time transient was recorded by using Keithley sourcemeter. The morphology of the samples was viewed by a scanning electron microscopy. The current versus time transient decreased with the volume percent of ethanol, indicating reduction of growth rate of porous anodic alumina. Porous anodic alumina formed in oxalic acid without ethanol exhibit a complicated structure with irregular pore size and pore shape. Increasing volume percent of ethanol in the oxalic acid improved the pore size and shape. This is probably due to the cooling effect of the ethanol and prolonged time for pore organization. Typical morphology of porous anodic alumina can be formed by anodizing at 40 V at room temperature of 25 °C in 0.5 M oxalic acid with the addition of minimum of 30 volume percent of ethanol.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115355195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

The effect of softbaking temperature on SU-8 photoresist performance 软焙温度对SU-8光刻胶性能的影响

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920899

S. Johari, Nithiyah Tamilchelvan, M. Nor, M. M. Ramli, B. N. Taib, M. Mazalan, Y. Wahab

{"title":"The effect of softbaking temperature on SU-8 photoresist performance","authors":"S. Johari, Nithiyah Tamilchelvan, M. Nor, M. M. Ramli, B. N. Taib, M. Mazalan, Y. Wahab","doi":"10.1109/SMELEC.2014.6920899","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920899","url":null,"abstract":"One of the steps required during the fabrication of SU-8 mold for soft lithography is softbaking, which is conducted after the deposition of the photoresist. The purpose of softbaking is to stabilize the resist film and eliminate any remaining solvent through evaporation. This ensures that the resist surface is non-sticking, hence avoiding debris when transferring the patterns later. In this paper, we investigate the effects of softbaking temperature on the polymerization of SU-8 photoresist. The significance of this work is to optimize the fabrication process involved in producing SU-8 mold structures with thickness of 30 μm. This project involves a series of experiments covering softbaking temperatures ranging from 45° to 115° C. Experiments results show that softbaking temperature of 85°C results in completely stick and crack free structures. By this, a huge improvement obtained if compared to the result of processing at the standard soft bake temperature of 95°C. The soft bake temperature should not be taken lightly while optimizing SU-8 processing because it has a big influence on the material properties and the lithographic performance of the resist.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124282193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Synthesis and characterization of carbon nano structures on Gallium Phosphate 磷酸镓上碳纳米结构的合成与表征

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920781

Aishah Fauthan, Z. Yunusa, M. Hamidon, B. Majlis

引用次数: 0

Convergence of emerging technologies to address the challenges of the 21st century 融合新兴技术，应对21世纪的挑战

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920774

A. M. Madni

{"title":"Convergence of emerging technologies to address the challenges of the 21st century","authors":"A. M. Madni","doi":"10.1109/SMELEC.2014.6920774","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920774","url":null,"abstract":"There are numerous \"Grand Challenges\" facing humanity that will have to be addressed by us as a global society in order to maintain our well-being from the standpoint of quality of life, healthcare, environment, energy needs, manufacturing efficiencies, etc., if we are to continue humanity's trajectory of progress. Traditional technologies based on classical disciplines and thought processes of the past several decades are no longer viable in addressing these challenges, and a new approach based on interdisciplinary thinking is necessary. Fortunately, numerous emerging technologies are advancing at an unimaginable rate and it is the convergence of these technologies that demonstrate the potential to have a major impact on our lives, businesses, government, society and our planet. These emerging technologies are establishing the basis for a new paradigm in the development and commercialization of next generation intelligent, miniaturized, highly robust complex systems. This lecture will address some of these major technologies and their applications including, intelligent sensors and wireless sensor networks, intelligent cars and smart highways, tele-health (wireless healthcare), micro-electromechanical systems (MEMS), nanotechnology, clean technology, robotics and automation, smart grid, and ultra high throughput and wide bandwidth instrumentation.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"86 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120858627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The impact of channel doping in junctionless field effect transistor 沟道掺杂对无结场效应晶体管的影响

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920808

B. S. Lim, M. Arshad, N. Othman, M. Fathil, M. F. Fatin, U. Hashim

引用次数: 8

The effects of growth parameters on the electrical properties in InAlN/AlN/GaN high-electron-mobility transistors (HEMTs) 生长参数对 InAlN/AlN/GaN 高电子迁移率晶体管 (HEMT) 电性能的影响

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920907

Wei-Ching Huang, Y. Wong, Kuan-Shin Liu, Chi-Feng Hsieh, E. Chang

引用次数: 0

Synthesization of nickel nanoparticles embedded in SU8 polymer for electromagnetic actuator membrane 纳米镍包埋SU8聚合物电磁致动器膜的合成

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920834

M. Said, J. Yunas, Roer Ekapawinto, B. Majlis, B. Bais

引用次数: 4

Design of a 4-bit adder using reversible logic in quantum-dot cellular automata (QCA) 量子点元胞自动机(QCA)可逆逻辑4位加法器的设计

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920795

Darushini Kunalan, Chee Lee Cheong, C. F. Chau, Azrul bin Ghazali

引用次数: 39

Switching behavior of lateral-structured zinc oxide-based memristive device 横向结构氧化锌基记忆电阻器件的开关行为

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920894

R. Abu Bakar, M. Nazmi, Awatif Harun, N. Kamarozaman, N. Shaari, S. M. M. Kasim, S. H. Herman

引用次数: 1

high power LED heat dissipation simulation analysis via heat sink fin variation 基于散热片变化的大功率LED散热模拟分析

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920813

V. Retnasamy, Z. Sauli, R. Vairavan, S. Taniselass, H. Mamat

引用次数: 1