原子力显微镜基纳米光刻技术用于可重复的微纳米加工

A. Dehzangi, F. Larki, B. Majlis, Zainab Kazemi, M. Ariannejad, N. Khalilzadeh
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引用次数: 0

摘要

原子力显微镜纳米光刻(AFM)以其高空间分辨率和定位能力成为一种强大的微纳结构制造方法。AFM纳米光刻与绝缘体上硅(SOI)技术的优势相结合,为实现更可靠的硅纳米结构提供了机会。在这封信中,我们试图研究AFM基纳米光刻的可重复性,以制造微/纳米结构。本研究采用局部阳极氧化(LAO)方法,利用原子力显微镜(AFM)基纳米光刻技术在p型(1015 cm-3) SOI上制备了硅纳米结构。然后分别采用氢氧化钾(异丙醇饱和)和氢氟酸蚀刻法去除硅和氧化层。对影响制备工艺的所有参数进行了优化,最终结果表明,利用AFM基纳米光刻技术可以获得一种可重复的制备方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Atomic force microscope base nanolithography for reproducible micro and nanofabrication
Atomic force microscopy nanolithography (AFM) is a strong fabrication method for micro and nano structure due to its high spatial resolution and positioning abilities. Mixing AFM nanolithography with advantage of silicon-on-insulator (SOI) technology provides the opportunity to achieve more reliable Si nanostructures. In this letter, we try to investigate the reproducibility of AFM base nanolithography for fabrication of the micro/nano structures. In this matter local anodic oxidation (LAO) procedure applied to pattern a silicon nanostructure on p-type (1015 cm-3) SOI using AFM base nanolithography. Then chemical etching is applied, as potassium hydroxide (saturated with isopropyl alcohol) and hydrofluoric etching for removing of Si and oxide layer, respectively. All parameters contributed in fabrication process were optimized and the final results revealed a good potential for using AFM base nanolithography in order to get a reproducible method of fabrication.
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