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1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings最新文献

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Optical, properties of photoluminescent porous gallium phosphide 光致发光多孔磷化镓的光学性质
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557347
I. Belogorokhov, V. Karavanskii, A. Danilin, L.I. Belogorokhova
{"title":"Optical, properties of photoluminescent porous gallium phosphide","authors":"I. Belogorokhov, V. Karavanskii, A. Danilin, L.I. Belogorokhova","doi":"10.1109/SMICND.1996.557347","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557347","url":null,"abstract":"Nanopore gallium phosphide has been produced, and its optical characteristics have been studied. There is intense photoluminescence near the absorption edge. There are additional IR absorption bands. Measurements of the Raman scattering and IR reflection spectra reveal significant changes in the phonon spectrum.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129138156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra-low-power CMOS technologies 超低功耗CMOS技术
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557352
G. Schrom, S. Selberherr
{"title":"Ultra-low-power CMOS technologies","authors":"G. Schrom, S. Selberherr","doi":"10.1109/SMICND.1996.557352","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557352","url":null,"abstract":"The fast growing portable-electronics market as well as thermal dissipation, reliability, and scalability issues have launched a massive trend towards low-power and low-voltage technologies. This has lead to a new, reduced standard digital CMOS supply voltage of 3.3 V reducing the power consumption by 70%. However, the power consumption can still be cut down substantially by reducing the supply and threshold voltages much further without compromising systems performance. A loss in device speed can be compensated on the systems level by appropriate parallel architectures. Based on this concept of ultra-low-power CMOS technologies we explore the lower limits of CMOS supply voltage and switching energy for a variety of circuit classes analytically and numerically. Ultra-low-power (ULP) process and device design, device modeling, performance evaluation, and the specific problems associated with ULP mixed-analog-digital technologies are discussed.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121683977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 70
Improved X-ray silicon detectors for medical applications 改进的医用x射线硅探测器
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557477
E. Halmagean, E. Tsoi, K. Misiakos, M. Ohanisian, A. Véron, V. Cimpoca, D. Lazarovici
{"title":"Improved X-ray silicon detectors for medical applications","authors":"E. Halmagean, E. Tsoi, K. Misiakos, M. Ohanisian, A. Véron, V. Cimpoca, D. Lazarovici","doi":"10.1109/SMICND.1996.557477","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557477","url":null,"abstract":"The paper presents some results concerning the technology and behaviour of X-ray silicon detectors intended for controlling low radiation levels in interventional cardiology. An improved planar process was used for obtaining large area guard-ring test structures. The electrical characteristics, their modification after exposure to radiation and the results of spectroscopic X-ray measurements are discussed.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"152 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122785045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nonlinear optical processes in noncrystalline semiconductors 非晶体半导体中的非线性光学过程
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557428
V. Chumash, I. Cojocaru
{"title":"Nonlinear optical processes in noncrystalline semiconductors","authors":"V. Chumash, I. Cojocaru","doi":"10.1109/SMICND.1996.557428","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557428","url":null,"abstract":"The paper summarizes the peculiarities of the nonlinear interaction of short laser pulses with the noncrystalline semiconductors (chalcogenide glasses, a-Si:H), showing that noncrystalline semiconductors (NS) are an interesting material for high speed optoelectronics. The physical mechanisms, which can contribute to the nonlinear light absorption in NS under pulsed excitation, are critically reviewed.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"381 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115429098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Application of charge pumping technique for investigation of interface-trap behaviour during thermal annealing of irradiated power VDMOSFETs 应用电荷泵送技术研究辐照功率vdmosfet热退火过程中的界面阱行为
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557308
P. Igić, A. Jaksic
{"title":"Application of charge pumping technique for investigation of interface-trap behaviour during thermal annealing of irradiated power VDMOSFETs","authors":"P. Igić, A. Jaksic","doi":"10.1109/SMICND.1996.557308","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557308","url":null,"abstract":"A recently proposed charge-pumping technique for characterizing the Si-SiO/sub 2/ interface in power VDMOSFETs is applied in investigation of interface-trap behaviour during thermal annealing of /spl gamma/-ray irradiated power VDMOSFETs. The results are compared with those obtained by midgap method for determination of radiation-induced interface-trap densities. The applicability of charge pumping for providing the information on the number of interface traps at the interface between gate oxide and n/sup -/-epitaxial region of a VDMOSFET is demonstrated.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115437068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modelling of SiC vertical power DMOSFET structure using the fundamental MOSFET's set of equations SiC垂直功率DMOSFET结构的基本方程建模
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557383
P. Lungu
{"title":"Modelling of SiC vertical power DMOSFET structure using the fundamental MOSFET's set of equations","authors":"P. Lungu","doi":"10.1109/SMICND.1996.557383","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557383","url":null,"abstract":"The most important parameters for 6H-SiC and 3C-SiC are extracted from the literature and implemented in an original vertical DMOSFET modeling program using the fundamental set of equations that account for the MOSFET characteristics. A comparison of current-voltage characteristics and specific on resistance for different values of breakdown voltage at two significant temperatures for 6H-SiC, 3C-SiC and Si is provided in this paper.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"155 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127356117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Computer modelling of selective area epitaxy with organometallics 有机金属选择性区域外延的计算机模拟
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557467
A. Mircea, D. Jahan, A. Ougazzaden, D. Delprat, L. Silvestre, G. Zimmermann, A. Manolescu, A. Manolescu
{"title":"Computer modelling of selective area epitaxy with organometallics","authors":"A. Mircea, D. Jahan, A. Ougazzaden, D. Delprat, L. Silvestre, G. Zimmermann, A. Manolescu, A. Manolescu","doi":"10.1109/SMICND.1996.557467","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557467","url":null,"abstract":"Selective area epitaxy with organometallics (SAEOM) enjoys presently a wide interest. This is due to the capabilities that this technique offers in the area of optoelectronic device integration. Typically, SAEOM is used in conjunction with very thin (\"quantum\") layer structures to easily achieve controlled variations of the optical absorption edge along an integrated optical wave guide, leading to such integrated devices as, e.g., enhanced optical coupling laser, laser plus electro-absorption modulator, etc. This process is rather typical for organometallic vapor phase epitaxy (OMVPE) and cannot be duplicated with other competitive techniques such as GSMBE or CBE. Computer modeling the epitaxial deposition process can be used in this context, both for pre-designing the process and for post checking its success. For such a tool to be more than a qualitative guide, it must be tailored carefully to suit the experimental conditions. It is the purpose of the present paper to show that indeed, and in spite of the process complexity, the predictions of the computer model can be in quantitative agreement with experiment. Its field of application is basically in the technology of InGaAsP optoelectronic devices.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123585405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Surface pattern formation and the volatile component loss of heat treated metallisations of InP InP热处理金属化表面图案形成及挥发性成分损失
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557468
I. Mojzes, B. Kovács, I. Kun, L. Mate, M. Schuszter, L. Dobos
{"title":"Surface pattern formation and the volatile component loss of heat treated metallisations of InP","authors":"I. Mojzes, B. Kovács, I. Kun, L. Mate, M. Schuszter, L. Dobos","doi":"10.1109/SMICND.1996.557468","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557468","url":null,"abstract":"Palladium based metal systems can be used to make ohmic contacts to A/sup III/B/sup V/ compound semiconductors. A covering layer of gold is advantageous from the point of view of bonding as well. Gold palladium layers were studied on InP substrates. Samples were annealed in the vacuum chamber of a scanning electron microscope (SEM) and the volatile component loss (phosphorus) was monitored by a quadrupole mass spectrometer. The changes of the surface morphology were studied using the SEM images. It means that the change of surface morphology and the volatile component loss were monitored simultaneously. In the case of Pd/A/sup III/B/sup V/ samples a single characteristic peak due to the interaction taking place between the metallization and the substrate was observed on the volatile component loss vs. temperature curve. In this temperature range characteristic pattern formation can be detected. This surface morphology shows fractal behaviour. It is supposed that the giant volatile component loss originating from the interaction between the metallization and the substrate can be described using percolation theory.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123740124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High-level synthesis of an enhanced Connex memory 高级合成增强的康涅克斯存储器
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557330
Z. Hascsi, B. Mitu, M. Petre, G. Stefan
{"title":"High-level synthesis of an enhanced Connex memory","authors":"Z. Hascsi, B. Mitu, M. Petre, G. Stefan","doi":"10.1109/SMICND.1996.557330","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557330","url":null,"abstract":"Architectural deficiencies in symbolic processing systems are generated by the lack of an appropriate implementation of their memory functions. There are many well-defined memory functions, but there isn't yet an adequate structural implementation for any of them. The main memory functions are usually software implemented as data structures, using RAM as hardware support, but having low performance in applications because all implementations rely on sequential mechanisms. The Connex Memory (CM), involves a base-level structural parallelism that would increase the performance in tree/list processing. This paper is concerned with the synthesis of an enhanced version of CM. Specific applications of the CM include list processing, set operations, string matching and Prolog-like computation.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114218288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A light addressing electrochromic device 一种光寻址电致变色装置
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557450
Xu Yanzhong, Qiu Muqing, Li Naipin, Cao Guang-jun, Liu Sanqin
{"title":"A light addressing electrochromic device","authors":"Xu Yanzhong, Qiu Muqing, Li Naipin, Cao Guang-jun, Liu Sanqin","doi":"10.1109/SMICND.1996.557450","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557450","url":null,"abstract":"A novel electrochromic device structure is proposed in the study of the electrochromic information memory properties. A high resistive amorphous silicon dot is intercalated between the working electrochromic layer and the electronic electrode. Focused light beam can be applied to switch on the high resistive dot, hence the memory spots are addressed in two dimensional space.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121497580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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