超低功耗CMOS技术

G. Schrom, S. Selberherr
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引用次数: 70

摘要

快速增长的便携式电子市场以及散热、可靠性和可扩展性问题已经引发了低功耗和低电压技术的巨大趋势。这导致了一个新的,降低标准数字CMOS电源电压3.3 V,降低了70%的功耗。然而,在不影响系统性能的情况下,通过进一步降低电源和阈值电压,功耗仍然可以大大降低。设备速度的损失可以通过适当的并行架构在系统级别上得到补偿。基于这种超低功耗CMOS技术的概念,我们对各种电路类别的CMOS电源电压和开关能量的下限进行了分析和数值探索。讨论了超低功耗(ULP)工艺和器件设计、器件建模、性能评估以及与超低功耗混合模拟-数字技术相关的具体问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ultra-low-power CMOS technologies
The fast growing portable-electronics market as well as thermal dissipation, reliability, and scalability issues have launched a massive trend towards low-power and low-voltage technologies. This has lead to a new, reduced standard digital CMOS supply voltage of 3.3 V reducing the power consumption by 70%. However, the power consumption can still be cut down substantially by reducing the supply and threshold voltages much further without compromising systems performance. A loss in device speed can be compensated on the systems level by appropriate parallel architectures. Based on this concept of ultra-low-power CMOS technologies we explore the lower limits of CMOS supply voltage and switching energy for a variety of circuit classes analytically and numerically. Ultra-low-power (ULP) process and device design, device modeling, performance evaluation, and the specific problems associated with ULP mixed-analog-digital technologies are discussed.
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