发布求助
文献互助 智能选刊 最新文献

1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings最新文献

筛选
英文 中文
Experimental and theoretical investigation of PbTe growth by MBE on (111) BaF/sub 2/ substrates MBE在(111)BaF/ sub2 /基质上生长PbTe的实验和理论研究
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557471
K.I. Andronik, O.Y. Keloglu, V. Mazur, E.A. Zasavitski
{"title":"Experimental and theoretical investigation of PbTe growth by MBE on (111) BaF/sub 2/ substrates","authors":"K.I. Andronik, O.Y. Keloglu, V. Mazur, E.A. Zasavitski","doi":"10.1109/SMICND.1996.557471","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557471","url":null,"abstract":"Lead telluride films have been grown on cleaved BaF/sub 2/ substrates by MBE method. Growth process was monitored by RHEED system and the crystal structure of the obtained films was investigated by /spl theta/-2/spl theta/ and grazing angle X-ray tests. Optimal technological regimes are found and a phenomenological theoretical model of the MBE growth process is proposed.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115317555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monolithic bipolar-, CMOS-, and BiCMOS-receiver OEICs 单片双极、CMOS和bicmos接收器oeic
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557302
H. Zimmermann
{"title":"Monolithic bipolar-, CMOS-, and BiCMOS-receiver OEICs","authors":"H. Zimmermann","doi":"10.1109/SMICND.1996.557302","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557302","url":null,"abstract":"The possibilities of standard bipolar, CMOS, and BiCMOS processes with respect to their use for the manufacturing of optoelectronic integrated circuits (OEICs) as optical receivers will be compared. The improvement of the OEIC properties due to process modifications and application examples of silicon receiver OEICs will be further, major points of consideration.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122403491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Aluminum nitride films for optical applications 光学用氮化铝薄膜
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557473
V. Dumitru, E. Cimpoiasu, C. Morosanu, C. Nenu, D. Necsoiu
{"title":"Aluminum nitride films for optical applications","authors":"V. Dumitru, E. Cimpoiasu, C. Morosanu, C. Nenu, D. Necsoiu","doi":"10.1109/SMICND.1996.557473","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557473","url":null,"abstract":"Hard and adherent AlN layers on glass have been deposited by reactive magnetron sputtering. The deposition rate, the structure and the optical properties have been investigated mainly with respect to possible optical applications.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114300151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optimization of N-type InSb photoconductive detectors n型InSb光导探测器的优化
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557458
C. Grigorescu, S. A. Manea, M. Lazarescu, C. Logofatu, T. Necsoiu, T. Boţilă, I. Munteanu
{"title":"Optimization of N-type InSb photoconductive detectors","authors":"C. Grigorescu, S. A. Manea, M. Lazarescu, C. Logofatu, T. Necsoiu, T. Boţilă, I. Munteanu","doi":"10.1109/SMICND.1996.557458","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557458","url":null,"abstract":"The aim of this paper is to study the influence of power dissipation on the performance of n-type InSb photoconductive detectors for 3-5 /spl mu/m atmospheric window. By providing mainly a convective heat transfer among the elements of the device the power dissipation has been increased to 10 W/cm/sup 2/. An improvement in the spectral detectivity is observed. No enhancement in the total noise is remarked.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122132542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An amperometric glucose biosensor 安培葡萄糖生物传感器
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557315
C. Podaru, C. Bostam, C. Malide, O. Neagoe, Monica Simion, G. Popescu, D. Gargancinc, N. Tzetci
{"title":"An amperometric glucose biosensor","authors":"C. Podaru, C. Bostam, C. Malide, O. Neagoe, Monica Simion, G. Popescu, D. Gargancinc, N. Tzetci","doi":"10.1109/SMICND.1996.557315","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557315","url":null,"abstract":"In this paper a miniature, enzyme based, amperometric glucose biosensor is described. A new technology was developed: an Al/sub 2/O/sub 3/ porous anodic film, acting as a cathalytical membrane, assures a better adhesion of the polymeric films which contain the embedded enzyme. The experiments have shown a good linearity (nonlinearity less than 2%) in the range 10-20 mM glucose concentration.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128611340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Global optimisation for parallelism and locality in image synthesis parallel system 图像合成并行系统并行性和局部性的全局优化
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557332
F. Ionescu
{"title":"Global optimisation for parallelism and locality in image synthesis parallel system","authors":"F. Ionescu","doi":"10.1109/SMICND.1996.557332","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557332","url":null,"abstract":"The paper describes a method for static decomposition of computation and data domains in an image synthesis specialised parallel system, which defines the architecture of the system, with the goal to balance the load, minimise communication overhead, reduce sequential bottleneck and make the system scalable.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"327 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124612885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparative performance of the equivalent noise resistance of low-noise microwave FETs 低噪声微波场效应管等效抗噪性能的比较
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557337
A. Caddemi, F. Di Prima, M. Sannino
{"title":"Comparative performance of the equivalent noise resistance of low-noise microwave FETs","authors":"A. Caddemi, F. Di Prima, M. Sannino","doi":"10.1109/SMICND.1996.557337","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557337","url":null,"abstract":"Among the frequency-dependent noise parameters F/sub 0/, /spl Gamma//sub 0/ (magnitude and angle) and r/sub n/, the value of F/sub 0/ represents the minimum noise contribution of an active device in absence of any noise mismatch at the device input (which can be obtained at a single frequency), while r/sub n/ is a measure of the noise figure degradation upon departure from the optimum value of the noise source reflection coefficient. As such, the performance of r/sub n/ is of fundamental importance for the circuit designer when a broad-band low-noise amplifier has to be realized. In this paper, a comparative analysis and related comments are presented on the behavior of this noise parameter for different low-noise device types which have been characterized and modeled in our lab over the last ten years.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130551286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Stress induced charge effects in AlGaAs/GaAs heterojunction bipolar transistors AlGaAs/GaAs异质结双极晶体管的应力诱导电荷效应
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557432
O. Bajdechi, P. Mcnally
{"title":"Stress induced charge effects in AlGaAs/GaAs heterojunction bipolar transistors","authors":"O. Bajdechi, P. Mcnally","doi":"10.1109/SMICND.1996.557432","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557432","url":null,"abstract":"A simulation of stress-induced charge effects in AlGaAs/GaAs heterojunction bipolar transistors has been performed. The results prove that this charge does not modify the transistor's behaviour even at high emitter stress. The charge was computed using an analytical model and the simulations have been done using a MEDICI 2-D device simulator, including the heterojunction advanced module.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132631969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Vowel recognition with nonlinear perceptron 非线性感知器的元音识别
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557328
M. Grigore, I. Gavat
{"title":"Vowel recognition with nonlinear perceptron","authors":"M. Grigore, I. Gavat","doi":"10.1109/SMICND.1996.557328","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557328","url":null,"abstract":"In this paper we propose a new method for vowel recognition. Using as parameters the first three formants frequencies of a large set of pronunciations, we trained a neural network (Nonlinear Perceptron) which can easily recognise other vowels.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116991760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
MSIM2: mixed-signal short channel IGFET model for circuit simulations 用于电路仿真的混合信号短通道IGFET模型
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557438
H.J. Luo, C. Yeh, K. Hwang, R. Mendel
{"title":"MSIM2: mixed-signal short channel IGFET model for circuit simulations","authors":"H.J. Luo, C. Yeh, K. Hwang, R. Mendel","doi":"10.1109/SMICND.1996.557438","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557438","url":null,"abstract":"MSIM2 is a physical compact model specifically developed for mixed-signal and analog-intensive circuit simulations in deep sub-micron CMOS technologies. MSIM2 separates the drift and diffusion current components as continuous functions in all all operating regions, and shows superior accuracy and continuity in the subthreshold and moderate inversion regions even for second-order derivatives. It has full temperature scalability (-55/spl deg/C to 150/spl deg/C) and geometry scalability (down to 0.25 /spl mu/m in W and L), and uses less parameters than other advanced models. MSIM2 also includes scalable charge and noise models, and has been verified against various processes from around the world.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117238881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信