MBE在(111)BaF/ sub2 /基质上生长PbTe的实验和理论研究

1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI:10.1109/SMICND.1996.557471

K.I. Andronik, O.Y. Keloglu, V. Mazur, E.A. Zasavitski

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引用次数: 0

摘要

采用MBE法在劈裂的BaF/sub /衬底上生长碲化铅薄膜。用RHEED系统监测薄膜的生长过程，用/spl θ /-2/spl θ /和掠射角x射线测试研究薄膜的晶体结构。找到了最优的技术制度，并提出了MBE生长过程的现象学理论模型。

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Experimental and theoretical investigation of PbTe growth by MBE on (111) BaF/sub 2/ substrates

Lead telluride films have been grown on cleaved BaF/sub 2/ substrates by MBE method. Growth process was monitored by RHEED system and the crystal structure of the obtained films was investigated by /spl theta/-2/spl theta/ and grazing angle X-ray tests. Optimal technological regimes are found and a phenomenological theoretical model of the MBE growth process is proposed.

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1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings

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