{"title":"AlGaAs/GaAs异质结双极晶体管的应力诱导电荷效应","authors":"O. Bajdechi, P. Mcnally","doi":"10.1109/SMICND.1996.557432","DOIUrl":null,"url":null,"abstract":"A simulation of stress-induced charge effects in AlGaAs/GaAs heterojunction bipolar transistors has been performed. The results prove that this charge does not modify the transistor's behaviour even at high emitter stress. The charge was computed using an analytical model and the simulations have been done using a MEDICI 2-D device simulator, including the heterojunction advanced module.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"107 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Stress induced charge effects in AlGaAs/GaAs heterojunction bipolar transistors\",\"authors\":\"O. Bajdechi, P. Mcnally\",\"doi\":\"10.1109/SMICND.1996.557432\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A simulation of stress-induced charge effects in AlGaAs/GaAs heterojunction bipolar transistors has been performed. The results prove that this charge does not modify the transistor's behaviour even at high emitter stress. The charge was computed using an analytical model and the simulations have been done using a MEDICI 2-D device simulator, including the heterojunction advanced module.\",\"PeriodicalId\":266178,\"journal\":{\"name\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"volume\":\"107 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1996.557432\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557432","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Stress induced charge effects in AlGaAs/GaAs heterojunction bipolar transistors
A simulation of stress-induced charge effects in AlGaAs/GaAs heterojunction bipolar transistors has been performed. The results prove that this charge does not modify the transistor's behaviour even at high emitter stress. The charge was computed using an analytical model and the simulations have been done using a MEDICI 2-D device simulator, including the heterojunction advanced module.
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