Surface pattern formation and the volatile component loss of heat treated metallisations of InP

I. Mojzes, B. Kovács, I. Kun, L. Mate, M. Schuszter, L. Dobos
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引用次数: 2

Abstract

Palladium based metal systems can be used to make ohmic contacts to A/sup III/B/sup V/ compound semiconductors. A covering layer of gold is advantageous from the point of view of bonding as well. Gold palladium layers were studied on InP substrates. Samples were annealed in the vacuum chamber of a scanning electron microscope (SEM) and the volatile component loss (phosphorus) was monitored by a quadrupole mass spectrometer. The changes of the surface morphology were studied using the SEM images. It means that the change of surface morphology and the volatile component loss were monitored simultaneously. In the case of Pd/A/sup III/B/sup V/ samples a single characteristic peak due to the interaction taking place between the metallization and the substrate was observed on the volatile component loss vs. temperature curve. In this temperature range characteristic pattern formation can be detected. This surface morphology shows fractal behaviour. It is supposed that the giant volatile component loss originating from the interaction between the metallization and the substrate can be described using percolation theory.
InP热处理金属化表面图案形成及挥发性成分损失
钯基金属系统可用于对A/sup III/B/sup V/化合物半导体进行欧姆接触。从键合的角度来看,金的覆盖层也是有利的。在InP衬底上研究了金钯层。样品在扫描电子显微镜(SEM)真空室中退火,用四极杆质谱仪监测挥发性组分(磷)的损失。利用扫描电镜(SEM)研究了表面形貌的变化。这意味着可以同时监测表面形貌的变化和挥发性组分的损失。在Pd/A/sup III/B/sup V/样品的情况下,由于金属化和衬底之间发生的相互作用,在挥发性组分损失与温度曲线上观察到单个特征峰。在这个温度范围内,可以检测到特征图案的形成。这种表面形态表现出分形行为。假设金属化与基体相互作用导致的挥发性组分的巨大损失可以用渗流理论来描述。
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