{"title":"应用电荷泵送技术研究辐照功率vdmosfet热退火过程中的界面阱行为","authors":"P. Igić, A. Jaksic","doi":"10.1109/SMICND.1996.557308","DOIUrl":null,"url":null,"abstract":"A recently proposed charge-pumping technique for characterizing the Si-SiO/sub 2/ interface in power VDMOSFETs is applied in investigation of interface-trap behaviour during thermal annealing of /spl gamma/-ray irradiated power VDMOSFETs. The results are compared with those obtained by midgap method for determination of radiation-induced interface-trap densities. The applicability of charge pumping for providing the information on the number of interface traps at the interface between gate oxide and n/sup -/-epitaxial region of a VDMOSFET is demonstrated.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Application of charge pumping technique for investigation of interface-trap behaviour during thermal annealing of irradiated power VDMOSFETs\",\"authors\":\"P. Igić, A. Jaksic\",\"doi\":\"10.1109/SMICND.1996.557308\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A recently proposed charge-pumping technique for characterizing the Si-SiO/sub 2/ interface in power VDMOSFETs is applied in investigation of interface-trap behaviour during thermal annealing of /spl gamma/-ray irradiated power VDMOSFETs. The results are compared with those obtained by midgap method for determination of radiation-induced interface-trap densities. The applicability of charge pumping for providing the information on the number of interface traps at the interface between gate oxide and n/sup -/-epitaxial region of a VDMOSFET is demonstrated.\",\"PeriodicalId\":266178,\"journal\":{\"name\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1996.557308\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557308","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Application of charge pumping technique for investigation of interface-trap behaviour during thermal annealing of irradiated power VDMOSFETs
A recently proposed charge-pumping technique for characterizing the Si-SiO/sub 2/ interface in power VDMOSFETs is applied in investigation of interface-trap behaviour during thermal annealing of /spl gamma/-ray irradiated power VDMOSFETs. The results are compared with those obtained by midgap method for determination of radiation-induced interface-trap densities. The applicability of charge pumping for providing the information on the number of interface traps at the interface between gate oxide and n/sup -/-epitaxial region of a VDMOSFET is demonstrated.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
