Xu Yanzhong, Qiu Muqing, Li Naipin, Cao Guang-jun, Liu Sanqin
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A novel electrochromic device structure is proposed in the study of the electrochromic information memory properties. A high resistive amorphous silicon dot is intercalated between the working electrochromic layer and the electronic electrode. Focused light beam can be applied to switch on the high resistive dot, hence the memory spots are addressed in two dimensional space.
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